Epistar Corporation

Yi Ming Chen

Tzu Chieh Hsu

Chia-Liang Hsu

Chih-Chiang Lu

Chien-Fu Huang

Hsin-Chih Chiu

Yao-Ning Chan

Chun-Hsien Chang

Shih-I Chen

Jhih-Sian Wang

Chih Chiang Lu

Huang-Chien Fu

Chun Yu Lin

Ching Huai Ni

Ching Pei Lin

Hsin Chih Chiu

The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; wherein there is a trench separating two adjacent semiconductor stacked blocks on the first substrate, and a width of the trench is less than 10 &#x3bc;m; and conducting a first separating step to separate a first semiconductor stacked block of the plurality of semiconductor stacked blocks from the first substrate and keep a second semiconductor stacked block on the first substrate.

Light-emitting device and method of manufacturing thereof

This disclosure discloses a light-emitting device. The light-emitting device comprises: a substrate; and a first light-emitting unit comprising a plurality of light-emitting diodes electrically connected to each other on the substrate. A first light-emitting diode in the first light-emitting unit comprises a first semiconductor layer with a first conductivity-type, a second semiconductor layer with a second conductivity-type, and a light-emitting stack formed between the first and second semiconductor layers. The first light-emitting diode in the first light-emitting unit further comprises a first connecting layer on the first semiconductor layer for electrically connecting to a second light-emitting diode in the first light-emitting unit; a second connecting layer, separated from the first connecting layer, formed on the first semiconductor layer; and a third connecting layer on the second semiconductor layer for electrically connecting to a third light-emitting diode in the first light-emitting unit.

Light-emitting device

Growing community of inventors

Hsinchu, Taiwan

Yi Ming Chen