Epistar Corporation

Industrial Technology Research Institute

National Chung Cheng University

Yi-Ming Chen

Tzu-Chieh Hsu

Chia-Liang Hsu

Chun-Yu Lin

Chih-Chiang Lu

Ching-Pei Lin

Yao-Ning Chan

Tsung-Hsien Yang

Min-Hsun Hsieh

Jhih-Sian Wang

Hsin-Chih Chiu

Ching-Huai Ni

Chien-Fu Huang

Shih-Chang Lee

Yi-Tang Lai

Shih-I Chen

Hao-Min Ku

Wei-Yu Chen

Hsin-Ying Wang

Tsung-Xian Lee

Han-Min Wu

Chia-Fen Tsai

Chou-Chih Yin

Tzu-Ghieh Hsu

Chi-Hsing Chen

Yi-Yang Chiu

Hui-Fang Kao

Kun-De Lin

Hsiang-Ling Chang

Shu-Chung Liao

Chung-Hao Wang

Chun-Fu Tsai

Chao-Hsing Chen

Chun-Wei Chang

Hsin-Mao Liu

Wen-Luh Liao

Chun-Chang Chen

Yu-Ren Peng

Ta-Jen Peng

Chiung-Hung Wang

Jen-Shui Wang

Yu-Chi Wang

Shun-Tien Lee

Jun-Yi Li

Yao-Ling Cheng

Jun-Chung Chen

Chung-Hsun Chien

Chiu-Lin Yao

Chen Ou

Jia-Kuen Wang

Chien-Kai Chung

Wen-Hung Chuang

Tzu-Yao Tseng

Rong-Ren Lee

Bo-Jiun Hu

Ying-Chih Chen

Tsung-Hsun Chiang

Hsin-Chan Chung

Cheng-Nan Han

Hung-Ta Cheng

Chien-Chih Liao

Tzuo-Liang Luo

Yung-Fu Chang

Min-Yen Tsai

Hsing-Chao Chen

Cheng-Da Shaw

Chih-Hao Hsu

Shiuan-Leh Lin

Chen-Yu Kai

Yuan-Jen Chang

Sheng-Fuh Chang

Kuan-Yi Lee

Tzu Chieh Hsu

Ye-Ming Hsu

Zong-Xi Chen

Shao-Ping Lu

Chun-Hsien Chang

Chi-Cheng Lin

Jhih-Jheng Yang

Cherng-Shiun Wu

Chih-Wei Wei

Wei-Juh Lin

Hao-Chun Liang

Wei-Jen Hsueh

Yu-Tsu Lee

Sheng-Ming Ma

Shao-Ying Hung

Chia-Hung Chiu

Chi-Lun Hsu

Tian-You Hou

Yi-Hsuan Chen

Ching-Sheng Chen

Tien-Yang Wang

Shao-Ku Huang

Cheng-Yu Chou

Ming-Fa Huang

Wei-Shan Yeoh

Chang-Hsiu Wu

Wei-Wun Jheng

Min-Hao Yang

A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.

Semiconductor light emitting device and method of fabricating the same

A semiconductor device includes a semiconductor stack, a third semiconductor structure, a dielectric layer, and a reflective layer under the third semiconductor structure. The semiconductor stack includes a first semiconductor structure, an active structure, a second semiconductor structure. The first semiconductor structure has a first surface which includes a first portion and a second portion, and the first surface has a first area. The third semiconductor structure connects to the first portion, and has a second surface with a second area. The dielectric layer connects to the second portion and includes a plurality of openings, and the plurality of openings have a third area. A ratio of the second area to the first area is between 0.1˜0.7, and a ratio of the third area to the first area is less than 0.2.

Semiconductor device

A semiconductor light-emitting device comprises a semiconductor stack having a first surface, wherein the first surface comprises multiple protrusion portions and multiple concave portions; a first electrode on the first surface and electrically connecting with the semiconductor stack; a second electrode on the first surface and electrically connecting with the semiconductor stack; and a transparent conduction layer conformally covering the first surface and between the first electrode and the semiconductor stack, wherein the first electrode comprises a first bonding portion and a first extending portion, and the first extending portion is between the first bonding portion and the transparent conduction layer and conformally covers the transparent conduction layer.

Semiconductor light-emitting device

A semiconductor device is provided, which includes a semiconductor stack and a first contact structure. The semiconductor stack includes an active layer and has a first surface and a second surface. The first contact structure is located on the first surface and includes a first semiconductor layer, a first metal element-containing structure and a first p-type or n-type layer. The first metal element-containing structure includes a first metal element. The first p-type or n-type layer physically contacts the first semiconductor layer and the first metal element-containing structure. The first p-type or n-type layer includes an oxygen element (O) and a second metal element and has a thickness less than or equal to 20 nm, and the first semiconductor layer includes a phosphide compound or an arsenide compound.

Semiconductor device and semiconductor component including the same

An optoelectronic semiconductor device includes a substrate, a first type semiconductor structure, a second type semiconductor structure, an active structure and a contact structure. The first type semiconductor structure is located on the substrate and has a first protrusion part with a first thickness and a platform part with a second thickness. The second type semiconductor structure is located on the first type semiconductor structure. The active structure is between the first type semiconductor structure and the second type semiconductor structure. The contact structure is disposed between the first type semiconductor structure and the substrate. The second thickness of the platform part is in a range of 0.01 μm to 1 μm.

Light-emitting device

The present disclosure provides a semiconductor device and a semiconductor component. The semiconductor device includes an active structure, a ring-shaped semiconductor contact layer, a first electrode, and an insulating layer. The active structure has a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer located between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer. The ring-shaped semiconductor contact layer is located on the second-conductivity-type semiconductor layer and having a first inner sidewall and a first outer sidewall. The first electrode has an upper surface and covers the ring-shaped semiconductor contact layer. The insulating layer covers the first electrode and the active structure and has a second inner sidewall and a second outer sidewall. The first inner sidewall is not flush with the second inner sidewall in a vertical direction.

Semiconductor device and semiconductor component

A lubricating oil volume adjustment system and a lubricating oil volume adjustment method are provided. The system includes a storage device and a processor and is connected to a machine including a motor through a data acquisition device acquiring current information of the motor. The storage device stores a machine learning model trained by a training data set including a plurality of pieces of the current information of the motor during operation and a plurality of temperature values measured during operation of the machine. The processor is configured to acquire the current information of present operation of the motor by using the data acquisition device, predict a temperature value of the machine when the motor operates under the current information by using the machine learning model, and calculate and adjust a lubricating oil volume suitable to be used by the machine during operation according to the predicted temperature value.

Lubricating oil volume adjustment system and lubricating oil volume adjustment method

Disclosed is a light-emitting device comprising a light-emitting stack having a length, a width, a first semiconductor layer, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer, wherein the first semiconductor layer, the active layer, and the second semiconductor layer are stacked in a stacking direction. A first electrode is coupled to the first semiconductor layer and extended in a direction parallel to the stacking direction and a second electrode is coupled to the second semiconductor layer and extended in a direction parallel to the stacking direction. A dielectric layer is disposed between the first electrode and the second electrode.

An optoelectronic semiconductor device includes a semiconductor stack, an electrode, and a plurality of contact portions. The semiconductor stack includes a first type semiconductor structure, an active structure on the first type semiconductor structure, and a second type semiconductor structure on the active structure. The first type semiconductor structure includes a first protrusion part, a second protrusion part and a platform part between the first protrusion part and the second protrusion part. The semiconductor stack includes a thickness. The electrode on the second type semiconductor structure includes a region corresponding to the first protrusion. The contact portions are located at the second protrusion part without being at the first protrusion part. The contact portions are attached to the first type semiconductor structure. There is a first distance between the electrode and the nearest contact portion, and a ratio of the first distance to the thickness of the semiconductor stack is larger than 5.

This disclosure discloses a light-emitting device. The light-emitting device includes a light-emitting stack having a first-type semiconductor layer, a second-type semiconductor layer, and an active layer formed between the first-type semiconductor layer and the second-type semiconductor layer; and a reflective structure formed on the first-type semiconductor layer and having a first interface and a second interface. A critical angle at the first interface for a light emitted from the light-emitting stack is larger than that at the second interface. The reflective structure electrically connects to the first-type semiconductor layer at the first interface, and an area of the first interface is more than an area of the second interface in a top view.

A tool-life prediction method, applicable to a machine tool having a machining end, includes steps of capturing a plurality of measurement data from a tool of the machining end, transforming each of the plurality of measurement data into a corresponding complex process capability index (Cpk), utilizing an artificial neural network being trained to generate a tool-life prediction scale with respect to the Cpk, and then based on the tool-life prediction scale to determine a remaining tool life of the tool. In addition, a tool life prediction system is also provided.

Tool-life prediction system and method thereof

Growing community of inventors

Hsinchu, Taiwan

Yi-Ming Chen