Raynergy Tek Incorporation

Industrial Technology Research Institute

Raynergy Tek Inc.

Winbond Electronics Corporation

Shinera Co., Ltd.

Yi-Ming Chang

Chuang-Yi Liao

Chen-Kun Chen

Chun-Chieh Lee

Kuen-wei Tsai

Chia-Hua Li

Nai-Wei Teng

Wen-Yung Yeh

Su-Tsai Lu

Wei-Long Li

Yu-Tang Hsiao

Huei Shuan Tan

Huei-Shuan Tan

Chih-Ming Lai

Chih-Wei Chen

Chain-Shu Hsu

Sheng-Feng Chung

You-Wei Lin

Bao-Shun Yau

Chia-Hao Lee

Priti Tiwana

Jun-Yan Yu

Kuan-Lin Peng

Jui-chih Kao

Nicolas Blouin

Luca Lucera

Tim Poertner

Graham Morse

Hsiuan-ling Ho

Yun-Kuei Yang

An electrode connection structure is provided and includes a substrate, a first electrode, a second electrode, a semiconductor layer, a third electrode, and a conductive block. The first electrode and the second electrode are located on the substrate. The semiconductor layer is located on the first electrode and the second electrode. The third electrode is on the semiconductor layer. The conductive block penetrates through the semiconductor layer and the third electrode and directly contacts the second electrode and the third electrode. A first upper surface of the conductive block and a second upper surface of the third electrode are in different planes.

Electrode connection structure and method of forming the same

The present invention is a structure of a photodiode, which comprises a substrate; a first electrode is arranged on the substrate; a first transport layer is arranged on the first electrode; a photoactive layer is arranged on the first transport layer, the photoactive layer includes a P-type semiconductor layer and an N-type semiconductor layer. The P-type semiconductor layer and the N-type semiconductor layer have a composition ratio between 1:0.5 and 1:1.5. The photoactive layer has a thickness ranging from 1 μm to 15 m, the photoactive layer has a first energy gap value, and a second electrode is disposed on the photoactive layer.

Structure of the photodiode

A method of patterning semiconductor layer includes the following operations. A first electrode and a second electrode are formed within a substrate. A patterned polymer layer with a first portion on a portion of the second electrode and a second portion on an edge portion of the substrate is formed on the substrate. A semiconductor layer is deposited on the patterned polymer layer, the substrate, and the first electrode. The first portion of the patterned polymer layer and the semiconductor layer on the first portion are removed to form a through-hole in the semiconductor layer that exposes the portion of the second electrode. A conductive block is deposited on the semiconductor layer and in the through-hole.

Method of patterning a semiconductor layer

The present invention relates to a structure of photodiode, which comprises a substrate, a first electrode, an electron transport layer, a photoactive layer, a filter layer, and a second electrode. The first electrode is disposed on the substrate. The electron transport layer is disposed on the first electrode. The photoactive layer is disposed on the electron transport layer. The photoactive layer has a first energy gap value. The filter layer is disposed on the photoactive layer and has a second energy gap value. The second electrode is disposed on the filter layer. The second energy gap value is greater than the first energy gap value. The ratio of the second energy gap value to the first energy gap value is an energy gap ratio. The energy gap ratio is greater than 1 and less than or equal to 3.

The present invention relates to a non-fullerene acceptor compound containing benzoselenadiazole, and organic optoelectronic devices comprising the same.

Non-fullerene acceptor compound containing benzoselenadiazole and organic optoelectronic device including the same

An electronic device includes a substrate, a plurality of electronic components and a conductive material. The electronic components are arranged on the substrate, and the electronic components respectively include a lower electrode, a semiconductor layer and an upper electrode, and they are sequentially stacked on the substrate. The electronic components share the semiconductor layer, and the semiconductor layer forms a plurality of connecting channels through the semiconductor layer. The connecting channels are located between the upper electrode of the first electronic component in the electronic components and the lower electrode of the second electronic component in the electronic components. These connecting channels are processed by lasers of different powers. The conductive material is arranged in the connecting channel so that the upper electrode of the first electronic component is electrically connected to the lower electrode of the second electronic component.

Electronic device and manufacturing method of the same

A semiconductor mixed material comprises an electron donor, a first electron acceptor and a second electron acceptor. The first electron donor is a conjugated polymer. The energy gap of the first electron acceptor is less than 1.4 eV. At least one of the molecular stackability, π-π*stackability, and crystallinity of the second electron acceptor is smaller than the first electron acceptor. The electron donor system is configured to be a matrix to blend the first electron acceptor and the second electron acceptor. The present invention also provides an organic electronic device including the semiconductor mixed material.

Semiconductor mixed material and application thereof

The invention relates to a photodiode, like an photovoltaic (OPV) cell or photodetector (OPD), comprising, between the photoactive layer and an electrode, a hole selective layer (HSL) for modifying the work function of the electrode and/or the photoactive layer, wherein the HSL comprises a fluoropolymer and optionally a conductive polymer, and to a composition comprising such a fluoropolymer and a conductive polymer.

Photodiode comprising fluropolymer compound

Organic photovoltaic device comprises a first electrode, a first carrier transfer later, an active layer, a second carrier transfer layer and a second electrode. The first electrode is a transparent electrode. The active layer includes at least one electron donor, a first electron acceptor, and a second electron acceptor. Wherein, the electron donor is an organic polymer. The first electron acceptor is a crystalline material, and the self-molecule stacking distance of the first electron acceptor is less than 4 Å. The second electron acceptor is a crystal destruction material, and the second electron acceptor includes a fullerene derivative. The organic photovoltaic device of the present invention not only has a controllable morphology formation but also can enhance fill factor and improve power conversion efficiency.

Organic semiconductor mixed material and organic photovolatic device using the same

Organic photoelectric device comprises a first electrode, a first carrier transfer layer, an active layer, a second carrier transfer layer and a second electrode. The first electrode is a transparent electrode. The active layer includes at least one organic semiconductor material including a structure such as Formula I: The second carrier transfer layer is composed between the active layer and the second electrode. When X1 and X2 are selected from one of Si, Ge and derivatives thereof, the active layer further includes an organic solvent, and the solubility of the organic solvent to the active layer is not less than 5 mg/mL. When X1 and X2 are selected from one of C and its derivatives, the active layer further includes an additive. The power conversion efficiency of the organic photoelectric device of the present invention can be up to more than 14%.

Organic semiconductor material and organic photoelectric device using the same

The present invention provides a polymer-polyoxometalate composite ink, which comprises a solvent, a polymer or an intertwined structure with more than one polymer and a polyoxometalate, wherein a weight ratio of the polymer or the intertwined structure with more than one polymer to the polyoxometalate is in the range from 1:0.001 to 1:0.09. The said polymer-polyoxometalate composite ink could be configured to produce a carrier transport film and an organic electronic device comprising the carrier transport film.

Polymer-polyoxometalate composite ink and application thereof

A wearable device and respiration sensing module are provided. The wearable device includes a first respiration sensing module and a second respiration sensing module. The first respiration sensing module is configured to sensing respiration of a user to obtain a first respiration information. The second respiration sensing module is configured to sensing respiration of the user to obtain a second respiration information. The second respiration sensing module includes a substrate, a first electrode, a second electrode and a stretchable conductive element. The first electrode and the second electrode are disposed on a first surface of the substrate. The stretchable conductive element is physically and electrically connected between the first electrode and the second electrode. The respiration of the user is judged according to the first respiration information and the second respiration information.

Wearable device and respiration sensing module

A hole transporting material comprises a conductive polymer coil, and a plurality of transition metal oxide particles, which suspended and dispersed in the conductive polymer coil. Wherein the transition metal oxide particles are formed in the conductive polymer coil by a sol-gel reaction. The invention also disclosed a method of manufacturing a hole transporting material and an organic photodiode. The hole transporting material of the present invention can has a good match with an electron donor material of an active layer, so that the organic photodiode including the hole transporting material said above can have better power conversion efficiency.

Hole transporting material, manufacturing method thereof, and organic photodiode thereof

An illumination device includes an OLED panel, an electrode structure, and a control module. The OLED panel includes a light-emitting layer configured to emit a light beam. The electrode structure is overlaid on the OLED panel. The electrode structure includes a first touch electrode including at least two conductive portions, and the conductive portions of the first touch electrode are electrically connected to the other conductive portions. The control module is electrically connected to the OLED panel and the first touch electrode. The light-emitting layer further includes a light-emitting material, and a width of the light-emitting material is greater than half of a width of the first touch electrode.

Illumination device

An electric field-induced carrier generation layer including a p-type material and an n-type material is provided. The p-type material and the n-type material are alternately distributed in at least one direction different from a thickness direction of the electric field-induced carrier generation layer. An organic electronic device is also provided.

Growing community of inventors

Hsinchu, Taiwan

Yi-Ming Chang