Chartered Semiconductor Manufacturing Ltd (corporation)

Yi Min Wang

Shao-fu Sanford Chu

Jiong Zhang

Kai Shao

Qing Hua Zhang

Zhang Jiong

Sanford Shao Fu Chu

A spiral inductor is provided including a substrate and an inductor dielectric layer over the substrate having a spiral opening provided therein. The spiral inductor is in the spiral opening with the spiral inductor including a plurality of parallel spiral vias connected together at center proximate and center distal ends of the spiral inductor.

Via/line inductor on semiconductor material

A spiral inductor, and manufacturing method therefore, is provided including a substrate and an inductor dielectric layer over the substrate having a spiral opening provided therein. A spiral inductor is in the spiral opening with the spiral inductor including a plurality of parallel spiral vias connected together at center proximate and center distal ends of the spiral inductor.

A process of fabricating a sub-micron MOSFET device, featuring a high dielectric constant gate insulator layer, and a metal gate structure, has been developed. Processes performed at temperatures detrimental to the high dielectric, gate insulator layer, such as formation of spacers on the sides of subsequent gate structures, as well as formation of source/drain regions, are introduced prior to the formation of the high dielectric, gate insulator layer. This is accomplished via use of a dummy gate structure, comprised of silicon nitride, used as a mask to define the source/drain regions, and used as the structure in which sidewall spacers are formed on. After selective removal of the dummy gate structure, creating an opening in an interlevel dielectric layer exposing the MOSFET channel region, deposition of the high dielectric, gate insulator layer, on the surface of the MOSFET channel region, is performed.

Growing community of inventors

Singapore, Singapore

Yi Min Wang