Playnitride Display Co., Ltd.

Yi-Min Su

Chih-Ling Wu

Yu-Yun Lo

Bo-Wei Wu

Shiang-Ning Yang

Yi-Chun Shih

Yen-Yeh Chen

Gwo-Jiun Sheu

Sheng-Chieh Liang

Tzu-Yang Lin

Yi-Ching Chen

Pei-Hsin Chen

Yu-Hung Lai

Yu-Chu Li

Ying-Tsang Liu

Huan-Pu Chang

Ying-Ting Lin

Tzu-Yu Ting

A micro device includes an epitaxial structure, an overcoat layer, and a first light-guiding structure. The epitaxial structure has a top surface and a bottom surface opposite to each other and a peripheral surface connecting the top surface and the bottom surface. The insulating layer covers at least the bottom surface and part of the peripheral surface of the epitaxial structure. The overcoat layer includes a contact portion and an extension portion. The contact portion conformally covers the insulating layer and the peripheral surface and the bottom surface of the epitaxial structure, and the extension portion connects the contact portion and extends in a direction away from the peripheral surface. The display apparatus includes a circuit substrate and a plurality of the above-mentioned micro devices. The micro devices are disposed and are correspondingly electrically connected to the first pads and the second pads of circuit substrate.

Micro device and display apparatus

A micro light emitting device structure includes a substrate, a connecting layer, a micro light emitting device and a covering layer. The connecting layer is connected to the substrate. The micro light emitting device is removably connected to the connecting layer, and includes a semiconductor epitaxial structure and two electrodes. The semiconductor epitaxial structure has an outer surface. The electrodes are disposed on a first surface of the outer surface of the semiconductor epitaxial structure, or disposed on the first surface of the outer surface of the semiconductor epitaxial structure and a second surface of the semiconductor epitaxial structure away from the first surface, respectively. The covering layer is disposed on the outer surface of the semiconductor epitaxial structure.

Micro light emitting device structure and display apparatus

A micro light emitting device display apparatus including a substrate, a plurality of micro light emitting devices, an isolation layer, and at least one first air gap is provided. The substrate has a plurality of connection pads. The micro light emitting devices are discretely disposed on the substrate. The isolation layer is disposed between the substrate and each of the micro light emitting devices. The at least one first air gap is disposed between the substrate and a surface of the isolation layer facing the substrate.

Micro light emitting device display apparatus

An epitaxial structure adapted to a semiconductor pickup element is provided. The semiconductor pickup element has at least one guiding structure and provided with a pickup portion. The epitaxial structure includes a semiconductor layer corresponding to the pickup portion and capable of being picked up by the semiconductor pickup element. The epitaxial structure also includes at least one alignment structure disposed on the semiconductor layer and corresponding to the at least one guiding structure, so that the epitaxial structure and the semiconductor pickup element are positioned relative to each other. The number of the at least one alignment structure matches the number of the at least one guiding structure.

Epitaxial structure, semiconductor structure including the same, and semiconductor pickup element for transferring the same

A semiconductor structure includes a substrate, a plurality of micro semiconductor devices and a fixing structure. The micro semiconductor devices are disposed on the substrate. The fixing structure is disposed between the substrate and the micro semiconductor devices. The fixing structure includes a plurality of conductive layers and a plurality of supporting layers. The conductive layers are disposed on the lower surfaces of the micro semiconductor devices. The supporting layers are connected to the conductive layers and the substrate. The material of each of the conductive layers is different from the material of each of the supporting layers.

Micro semiconductor display device

A micro light emitting device display apparatus including a circuit substrate, a plurality of micro light emitting devices, a first common electrode layer, and a second common electrode layer is provided. The micro light emitting devices are disposed on the circuit substrate and individually include an epitaxial structure and a first-type electrode and a second-type electrode respectively disposed on two side surfaces of the epitaxial structure opposite to each other. The first common electrode layer is disposed on the circuit substrate and directly covers the plurality of first-type electrodes of the micro light emitting devices. The second common electrode layer is disposed between the micro light emitting devices. The first common electrode layer is electrically connected to the second common electrode layer.

A micro light emitting diode including an epitaxial structure and two electrodes is provided. The epitaxial structure includes a first surface, a second surface and a side surface. The first surface is opposite to the second surface, and the side surface is connected to the first surface and the second surface. The side surface includes a first portion and a second portion. The first portion is connected to the second portion to form a turning position. A width of the epitaxial structure gradually increases from the first surface to the turning position and gradually decreases from the turning position to the second surface. The two electrodes are disposed on the epitaxial structure and are electrically connected to the epitaxial structure. A micro light emitting diode device substrate adopting the micro light emitting diode is also provided.

Micro light emitting diode and micro light emitting diode device substrate

A micro light emitting device display apparatus including a substrate, a plurality of micro light emitting devices, an isolation layer, and an air gap is provided. The micro light emitting devices are discretely disposed on the substrate. The isolation layer is disposed between the micro light emitting devices. The air gap is disposed between the micro light emitting devices, the isolation layer, and the substrate.

A micro device includes an epitaxial structure, an insulating layer, and a light-transmissive layer. The epitaxial structure has a top surface and a bottom surface opposite to each other and a peripheral surface connected to the top surface and the bottom surface. The insulating layer covers the peripheral surface and the bottom surface of the epitaxial structure and exposes a portion of the peripheral surface. The light-transmissive layer covers the top surface of the epitaxial structure and is extended over at least a portion of the portion of the peripheral surface.

Micro device

Semiconductor structure and micro semiconductor display device

A micro semiconductor chip, a micro semiconductor structure, and a transfer device are provided. The micro semiconductor chip includes an epitaxial structure, a first-type electrode, a second-type electrode and a top light guide element. The epitaxial structure has a top surface, a bottom surface and a side surface. The top light guide element is disposed on the top surface of the epitaxial structure, wherein the top light guide element has a light extraction surface and a bottom surface, wherein the edge of the light extraction surface completely overlaps the edge of the bottom surface of the top light guide element. The light extraction surface is a curved surface, a combination of at least two curved surfaces, or a combination of at least one curved surface and at least one planar surface.

Micro semiconductor chip, micro semiconductor structure, and transfer device

A structure with micro device includes a substrate, at least one micro device, and at least one holding structure. The micro device includes an epitaxial structure and an overcoat layer. The epitaxial structure has a top surface and a bottom surface opposite to each other and a peripheral surface connecting the top surface and the bottom surface. The overcoat layer includes a contact portion and an extension portion. The contact portion covers the peripheral surface and the bottom surface of the epitaxial structure. The extension portion connects the contact portion and extends in a direction away from the peripheral surface. The holding structure includes at least one connecting portion, at least one sacrificial portion and at least one holding portion. The connecting portion is disposed on the top surface of the epitaxial structure and the extension portion of the overcoat layer. The sacrificial portion connects the connecting portion and the holding portion. A portion of the sacrificial portion contacts the extension portion to define a predetermined fracture region. The holding portion connects the sacrificial portion and extends onto the substrate.

Micro device and structure thereof

A micro light emitting device display apparatus including a circuit substrate, a plurality of epitaxial structures, a plurality of contact pads and a plurality of light shielding patterns is provided. The plurality of epitaxial structures are dispersedly arranged on the circuit substrate. The plurality of contact pads are disposed between the plurality of epitaxial structures and the circuit substrate. The plurality of epitaxial structures are electrically connected to the circuit substrate via the plurality of contact pads respectively. The plurality of light shielding patterns and the plurality of contact pads are alternately arranged on the circuit substrate, and each of the light shielding patterns is connected between two adjacent contact pads without overlapping with the contact pads and is adapted to block light with a wavelength ranging from 150 nm to 400 nm from penetrating through. A method of fabricating the micro light emitting device display apparatus is also provided.

Micro light emitting device display apparatus and method of fabricating the same

A micro semiconductor chip, a micro semiconductor structure, and a display device are provided. The micro semiconductor chip includes an epitaxial layer, a first electrode, a second electrode and a side light guide element. The epitaxial layer has a top surface, a bottom surface and a side surface. The first electrode and the second electrode are disposed on the bottom surface of the epitaxial layer. The side light guide element disposed on the side surface has a connecting portion and an extending portion. The connecting portion is in contact with a part of the extending portion, and the extending portion extends away from the side surface of the epitaxial layer. The extending portion has a top surface and a bottom surface, wherein a plane containing the top surface of the epitaxial layer forms an acute angle &#x3b8;with a plane containing the top surface of the extending portion.

Micro semiconductor chip, micro semiconductor structure, and display device

A micro semiconductor structure is provided. The micro semiconductor structure includes a substrate, a plurality of micro semiconductor devices disposed on the substrate, and a first supporting layer disposed between the substrate and the micro semiconductor devices. Each of the micro semiconductor devices has a first electrode and a second electrode disposed on a lower surface of the micro semiconductor devices. The lower surface includes a region, wherein the region is between the first electrode and the second electrode. An orthographic projection of the first supporting layer on the substrate at least overlaps an orthographic projection of a portion of the region on the substrate. The first supporting layer directly contacts the region.

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Miaoli County, Taiwan

Yi-Min Su