Hannstar Display Corporation

Chang Gung University

Uni Light Technology Inc.

Yi-Lun Chou

Yung-Hsiang Lin

Tean-Sen Jen

Ming-Tien Lin

Ray-Ming Lin

Nae-Guann Yih

Nai-Chuan Chen

Jen-Chih Li

Yuan-Chieh Lu

The present invention is a method for obtaining a better color rendering with a photoluminescence plate, and the better color rendering is obtained by using UV radiating on the photoluminescence plate stacked with a red photoluminescence plate, a green photoluminescence plate and a blue photoluminescence plate. Therefore, the color rendering is above 90% and close to the solar light. The photoluminescence plate can be made from directly coated with photoluminescence layers of three colors or with fully mixed fluorescent materials of three colors. Consequently, a white light relied on the present invention is more uniform than the conventional techniques with a color mixing performance based on tricolor LEDs.

Method for obtaining a better color rendering with a photoluminescence plate

A liquid crystal display is suitable for displaying images with rapid motions, and comprises an active matrix substrate equipped with a plurality of thin film transistors. The active matrix substrate comprises a plurality of pixels that are placed at the encircled areas of a plurality of scanning lines and a plurality of data lines. Each pixel consists of two thin film transistors and one pixel electrode. The data lines connected electrodes of the thin film transistors are connected to two adjoining data lines respectively, whereas the pixel connected electrodes of the two thin film transistors are together connected to the pixel electrode. The gate electrodes of the two thin film transistors are connected to two adjoining scanning lines respectively.

Display device and driving method thereof

An AlGaInP light emitting diode with improved illumination is provided. The AlGaInP light emitting diode includes a semiconductor substrate, a light re-emitting layer, an AlGaInP layer with a first doping concentration, an AlGaInP lower cladding layer with a second doping concentration less than the first doping concentration, an undoped AlGaInP active layer, an AlGaInP upper cladding layer, a window layer, an annular-shaped top electrode on the window layer and a layered electrode on a bottom of the semiconductor substrate. The light re-emitting layer includes at least a first region formed of the light re-emitting layer and a second region formed of AlOenclosing the first region. Since AlGaInP layer between the AlGaInP lower cladding layer and the light re-emitting layer has the first doping concentration larger than that of the AlGaInP lower cladding layer, the AlGaInP layer provides a transverse current spreading. The AlOregion also improves light reflection illuminating on the light re-emitting layer. As a result, the brightness performance of the light emitting diode is improved.

AlGaInP light emitting diode

Growing community of inventors

Taipei, Taiwan

Yi-Lun Chou