Epistar Corporation

Yi-Lun Chou

Chih-Hao Chen

Wei-Chih Peng

A method of manufacturing a light-emitting element includes: providing a substrate, wherein the substrate includes a top surface with a first area and a second area; introducing a semiconductor material to form a first layer on the first area and a second layer on the second area, wherein the first layer includes a first crystal quality and the second layer includes a second crystal quality, the first crystal quality is different from the second crystal quality; and dicing the substrate along the second area.

Light-emitting element and manufacturing method thereof

A light-emitting element, includes a substrate; and a semiconductor stack formed on the substrate, including: a first semiconductor layer having a first conductivity type; a second semiconductor layer having a second conductivity type; and a light-emitting stack formed between the first and second semiconductor layers; wherein in a cross-sectional view, an inner region of the first semiconductor layer includes a first region with a first thickness, and an edge of the first semiconductor layer includes a second region with a second thickness larger than the first thickness.

The present disclosure provides a semiconductor device including a carrier; a current blocking layer, formed on the carrier; a function structure, formed on the current blocking layer and comprising a surface opposite to the current blocking layer; a protective structure, formed on the function structure and exposing a portion of the surface; and an electrode, formed on the protective structure and exposing the portion of the surface.

Semiconductor device

The present disclosure provides a method of forming a light-emitting device comprising: providing a growth substrate having a front side and a rear side; forming a sacrificial layer on the front side of the growth substrate; forming a protective structure on the sacrificial layer; forming a light-emitting structure on the protective structure, wherein the light-emitting structure emits a first peak wavelength; providing a carrier; joining the carrier and the light-emitting structure; and transforming the sacrificial layer by irradiating a laser beam from the rear side to separate the growth substrate from the light-emitting structure, wherein the laser beam emits a second peak wavelength, and wherein the protective structure reflects the second peak wavelength away from the light-emitting structure.

Growing community of inventors

Hsinchu, Taiwan

Yi-Lun Chou