Macronix International Co., Ltd.

Realtek Semiconductor Inc.

Yi-Lin Yang

Yen-Hao Shih

Jenn-Gwo Hwu

Jung-Yu Hsieh

Chia-Hua Chang

A data processing device includes a memory device, a central processing unit (CPU), and a data processing circuit. The memory device includes a first memory area and a second memory area, wherein the first memory area is arranged to store a first type of data, and the second memory area is arranged to store a second type of data. The CPU is coupled to the memory device, and is arranged to access the memory device, wherein the CPU accesses the first memory area and the second memory area of the memory device. The data processing circuit is coupled to the memory device, and is arranged to access the memory device, wherein the data processing circuit only accesses the first memory area of the memory device.

Data processing device and associated memory management method

A manufacturing method of a charge-trapping memory device is provided. This method includes forming a stacked structure having at least a charge-trapping medium. An annealing process in a hydrogen gas is then performed on the stacked structure subsequent to the device fabrication process. The annealing process is conducted at a temperature of about 350&#xb0; C. to 450&#xb0; C. and with the concentration of the hydrogen gas greater than 0.5 mole percent.

Growing community of inventors

Hsinchu, Taiwan

Yi-Lin Yang