Opto Tech Corporation

Yi-Lin Ho

Lung-Han Peng

Jun-Jie Lin

A top-emitting light-emitting diode includes a glass substrate, a polysilicon layer, a white light emitting layer and a transparent conductive layer. The polysilicon layer is formed on a first surface of the glass substrate. Moreover, plural sub-wavelength structures are discretely arranged on a surface of the polysilicon layer at regular intervals. The white light emitting layer is formed over the polysilicon layer and the plural sub-wavelength structures. The transparent conductive layer is formed over the white light emitting layer.

Top-emitting light-emitting diode

A light emitting diode memory includes a substrate, a tunneling structure, a current spreading layer, a first electrode layer and a second electrode layer. The tunneling structure is formed on the substrate. The tunneling structure includes first, second and third material layers. The current spreading layer is formed on the tunneling structure. The first electrode layer is formed on the substrate. The second electrode layer is formed on the current spreading layer. When a bias voltage applied to the first electrode layer and the second electrode layer is higher than a reset voltage, the light emitting diode memory is in a reset state. When the bias voltage is lower than a set voltage, the light emitting diode memory is in a set state. When the bias voltage is higher than a turn-on voltage, the light emitting diode memory emits a light beam.

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Taipei, Taiwan

Yi-Lin Ho