Taiwan Semiconductor Manufacturing Comp. Ltd.

Yi-Lang Wu

Dian-Hau Chen

Lin-June Wu

Juei-Kuo Wu

Within an option selection device structure and a method for fabrication thereof there is formed a terminal metal layer and an option selection device at a co-planar level over a microelectronic substrate. The option selection device is passivated with: (1) a terminal metal passivation layer having an etch stop layer within its thickness; and (2) a bond pad passivation layer. There is simultaneously also formed through the bond pad passivation layer: (1) a via which accesses a bond pad formed contacting the terminal metal layer; and (2) an aperture over the option selection device which stops at the etch stop layer.

Microelectronic fabrication having edge passivated bond pad integrated with option selection device access aperture

A container for holding substrates such as a wafer cassette for holding semiconductor wafers is provided. The container is equipped with dividers on the interior sidewalls of the container which are of different lengths or different colors such that an operator when inserting a substrate into the container can easily identify the corresponding pairs of dividers to avoid the cross-slot misplacement of and the subsequent damage to the substrate.

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Pingjen, Taiwan

Yi-Lang Wu