Industrial Technology Research Institute

Walsin Lihwa Corporation

Changhua Christian Hospital

Yi-Keng Fu

Rong Xuan

Hsun-Chih Liu

Yen-Hsiang Fang

Chen-Peng Hsu

Chien-Chun Lu

Tzung-Te Chen

Chih-Wei Hu

Hsueh-Hsing Liu

Heng-Yuan Lee

Chia-Fen Hsieh

Wei-Hung Kuo

Po-Chun Yeh

Cheng-Da Shaw

Chia-Lung Tsai

Hung-Tse Chen

Chien-Ping Wang

Chen-Zi Liao

Suh-Fang Lin

Chuan-Wei Tsou

Hung-Ming Wu

Kan-Hsueh Tsai

Chun-Wen Chu

Ren-Hao Jiang

Shang-Ping Ying

Chia-Feng Lin

Han-Chieh Ho

Chih-Hsuen Chou

Chien-Pin Lu

Yu-Hsuan Lu

Bo-Chun Chen

A purifying device including a container, at least one cover, a sensing assembly and an ultraviolet source is provided. The container has a containing space, wherein the containing space is adapted to contain a liquid. The cover is adapted to be connected to the container to cover the containing space. The sensing assembly is disposed on the cover, wherein the sensing assembly is adapted to sense a usage state of the cover. The ultraviolet source is disposed on the cover and is adapted to generate an ultraviolet emitted to outside of the cover, wherein the ultraviolet source is turned on or turned off according the usage state of the cover.

Purifying device

A light source apparatus comprises a main body, a plurality of light source modules and a processor. The main body includes a plurality of configuration areas distributed on a surface of the main body. The plurality of configuration areas is oriented towards different directions, respectively. The plurality of light source modules is located in the plurality of configuration areas, respectively. Each of the plurality of light source modules includes a circuit substrate and an ultraviolet emitting device. The processor is electrically connected to the plurality of light source modules. The processor is adapted to drive the ultraviolet emitting device of each of the plurality of light source modules. A method of using a light source apparatus is also provided.

Light source apparatus and method of using the same

This disclosure provides an epitaxial wafer, which includes: a silicon wafer having a central area and an extremity area enclosing the central area, the extremity area having a stepped profile; and an nitride epitaxial layer formed on the silicon wafer; wherein, the stepped profile has a width between 10 and 1500 &#x3bc;m and a height between 1 and 500 &#x3bc;m.

Structure of epitaxial wafer and method of fabricating the same

An apparatus for measuring a curvature of a thin film includes a light emitting module, a first optical module, a second optical module, a third optical module, and an image analysis module. The light emitting module emits a single laser to be used as an incident light. The incident light is transmitted through a first optical path provided by the first optical module, then the incident light is guided by the second optical module to be incident to the thin film through a second optical path. A reflected light reflected by the thin film is transmitted through the second optical path, then guided by the third optical module to be transmitted along a third optical path. The image analysis module determines the curvature of the thin film according to the characteristic of the reflected light.

Apparatus for measuring a curvature of a thin film and the method thereof

A light emitting diode including a substrate, a p-type and n-type semiconductor layers, an active layer, an interlayer, an electron barrier layer, a first and a second electrodes are provided. The n-type semiconductor layer is disposed on the sapphire substrate. The active layer has an active region with a defect density greater than or equal to 2&#xd7;10/cm. The active layer is disposed between the n-type and p-type semiconductor layers. The wavelength of light emitted by the active layer is &#x3bb;, and 222 nm&#x2266;&#x3bb;&#x2266;405 nm. The active layer includes i quantum barrier layers and (i&#x2212;1) quantum wells, each quantum well is disposed between any two quantum barrier layers, and i&#x2267;2. N-type dopant is doped in at least k layers of the i quantum barrier layers, wherein k is a natural number and k&#x2267;1, when i even, k&#x2267;i/2, and when i is odd, k&#x2267;(i&#x2212;1)/2.

Light emitting diode with quantum barrier doping

An apparatus for measuring of a curvature of a thin film, is adapted to measure the curvature of a thin-film. The apparatus includes a light emitting module, a first optical module, a second optical module, a third optical module, an image capture module, and an image analysis module. The light emitting module emits at least one line laser as an incident light whose cross-sectional shape is a geometric picture formed of lines. The incident light is transmitted through a first optical path formed of the first optical module, and is directed to incident the thin film by the second optical module. The reflected light is reflected by the thin film go through the second optical path, and is directed to transmit through the third optical path by the third optical module, and then is captured by the capture module to form a second geometric picture.

Thin-film curvature measurement apparatus and method thereof

A carrier for carrying a semiconductor layer having a growth surface and at least one nano-patterned structure on the growth surface is provided. The at least one nano-patterned structure on the growth surface of the carrier has a plurality of mesas, a recess is formed between two adjacent mesas, in which a depth of the recess ranges from 10 nm to 500 nm, and a dimension of the mesa ranges from 10 nm to 800 nm.

Carrier for a semiconductor layer

A light emitting diode (LED) including a first-type doped GaN substrate, a first-type doped semiconductor layer, an active layer, a second-type semiconductor layer, a first electrode, and a second electrode is provided. The first-type doped GaN substrate has a first doped element. The first-type semiconductor layer is disposed on the first-type doped GaN substrate. The first-type semiconductor layer has a second doped element different from the first doped element, and the doped concentration of the second doped element&#x2014;may have a peak from 3E/cmto 1E/cmat an interface between the first-type doped GaN substrate and the first-type semiconductor layer. The active layer is disposed on the first-type semiconductor layer, and the second-type semiconductor layer is disposed on the active layer. The first electrode and the second electrode are respectively disposed on the first-type doped GaN substrate and the second-type semiconductor layer. Other LEDs are also provided.

Light emitting diode

A light emitting diode including a substrate, a p-type and n-type semiconductor layers, an active layer, a first and second electrodes is provided. The active layer is located between the n-type and p-type semiconductor layers, and includes i quantum wells and (i+1) quantum barrier layers, each quantum well is located between any two of the quantum barrier layers, each of k quantum wells among the i quantum wells is constituted of a light emitting layer and an auxiliary layer, in which an indium concentration of the auxiliary layer is greater than an indium concentration of the light emitting layer, where i and k are natural numbers greater than or equal to 1 and k&#x2266;i. The first electrode and second electrodes are located on the n-type semiconductor layer and the p-type semiconductor layer, respectively.

A light emitting diode device may include a carrier, a p-type and n-type semiconductor layers, an active layer, a first electrode and a second electrode is provided. The carrier has a growth surface and at least one nano-patterned structure on the growth surface, in which the carrier includes a substrate and a semiconductor capping layer disposed between the substrate and the n-type semiconductor layer. The n-type semiconductor layer and the p-type semiconductor layer are located over the growth surface of the carrier. The active layer is located between the n-type and p-type semiconductor layers, in which a wavelength &#x3bb; of light emitted by the active layer is 222 nm&#x2266;&#x3bb;&#x2266;405 nm, and a defect density of the active layer is less than or equal to 5&#xd7;10/cm. The first and second electrodes are respectively connected to the n-type and p-type semiconductor layers. A carrier for carrying a semiconductor layer is also provided.

A nitride semiconductor structure including a silicon substrate, a nucleation layer, a discontinuous defect blocking layer, a buffer layer and a nitride semiconductor layer is provided. The nucleation layer disposed on the silicon substrate, wherein the nucleation layer has a defect density d1. A portion of the nucleation layer is covered by the discontinuous defect blocking layer. The buffer layer is disposed on the discontinuous defect blocking layer and a portion of the nucleation layer that is not covered by the discontinuous defect blocking layer. The nitride semiconductor layer is disposed on the buffer layer. A ratio of a defect density d2 of the nitride semiconductor layer to the defect density d1 of the nucleation layer is less than or equal to about 0.5, at a location where about 1 micrometer above the interface between the nitride semiconductor layer and the buffer layer.

Nitride semiconductor structure

A light emitting diode including a GaN substrate, a first type semiconductor layer, a light emitting layer, a second type semiconductor layer, a first electrode, and a second electrode is provided. The GaN substrate has a first surface and a second surface opposite thereto, and the second surface has a plurality of protuberances, the height of the protuberance is h &#x3bc;m and the distribution density of the protuberance on the second surface is d cm, wherein 9.87&#xd7;10&#x2266;hd, and h&#x2266;1.8. The first type semiconductor is disposed on the first surface of the GaN substrate. The light emitting layer is disposed on a partial region of the first semiconductor layer, and the wavelength of the light emitted by the light emitting layer is from 375 nm to 415 nm. The second semiconductor layer is disposed on the light emitting layer.

Light emitting diode and fabricating method thereof

A light emitting device and a method of fabricating a light emitting device are provided. The light emitting device includes a carrier substrate, at least one epitaxy structure, a high resistant ring wall, a first electrode, and a second electrode. The epitaxy structure is disposed on the carrier substrate and includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked in sequence. The first semiconductor layer is relatively away from the carrier substrate and the second semiconductor layer is relatively close to the carrier substrate. The high resistant ring wall surrounds the epitaxy structure and a width of the high resistant ring wall is greater than 5 &#x3bc;m. The first electrode is disposed between the carrier substrate and the epitaxy structure. The second electrode is disposed at a side of the epitaxy structure away from the carrier substrate.

Growing community of inventors

Hsinchu County, Taiwan

Yi-Keng Fu