Industrial Technology Research Institute

Food Industry Research and Development Institute

Yi-Kai Wang

Tarng-Shiang Hu

Jia-Chong Ho

Tsung-Hsien Lin

Yu-Yuan Shen

Liang-Ying Huang

Jing-Yi Yan

Chi-Jen Kao

Yu-Rung Peng

Tsung-Hua Yang

Chen-Pang Kung

Yu-Wu Wang

Chih-Wen Hsiao

Der-Jang Yu

Wen-Chi Lin

Chun-Pin Huang

Chien-Hsien Yu

Ya-Lang Chen

Tin-Yin Liu

Mei-Ling Lu

A method for removing pests from harvested vegetables has steps of extracting a first portion of harvested vegetables to obtain a vegetable cleanser, and cleaning a second portion of harvested vegetables with the vegetable cleanser, such that pests residing on the second portion of harvested vegetables are removed from the second portion of harvested vegetables, wherein the first portion of harvested vegetables and the second portion of harvested vegetables independently contain vegetables selected from the group consisting of vegetables belonging to the families of Cruciferae, Compositae, Chenopodiaceae and Amaranthaceae. The aforementioned method is effective at removing pests from harvested vegetables and satisfies urgent needs to reduce use of chemical pesticides.

Method for removing pests from harvested vegetables

An electronic device and a display panel thereof are provided. The electronic device includes a first display panel and a casing. The first display panel has a first displaying part and a second displaying part. The first display panel includes a first bending mechanism which is disposed between the first displaying part and the second displaying part to bend or spread the first display panel. The casing has a first surface and a second surface opposite to the first surface. The casing includes a rail mechanism which is disposed on the second surface. The second displaying part is slid on the rail mechanism to shift the first display panel relatively to the casing.

Electric device and display panel thereof

A stacked structure including a soluble organic semiconductor material and a water soluble photosensitive material is provided. The water soluble photosensitive material is disposed on the surface of the soluble organic semiconductor material.

Method of patterning stacked structure

A method of fabricating an organic thin film transistor is provided. The method includes forming a source, a drain and a gate on a substrate and forming a dielectric layer to isolate the gate from the source and isolate the gate from the drain. An organic active material layer is formed on the substrate to fill a channel region between the source and the drain and cover the source and the drain. A barrier material layer is formed on the organic active material layer. Thereafter, the barrier material layer and the organic active material layer are patterned to form a barrier layer and an organic active layer and expose the source and the drain.

Organic thin film transistor and method of fabricating the same

A method of TFT (Thin Film Transistor) manufacturing and a substrate structure are provided. The structure includes a substrate and a self-alignment mask. A self-alignment mask on a substrate is first manufactured and then the self-alignment mask may synchronously extend with the substrate during the thermal process. When an exposure light source is provided on the side without a TFT formed, the self-alignment mask can overcome the problem that when a plastic substrate extends, the positions of the source and drain to be formed on the plastic substrate are incorrect, which has a great effect on the accuracy of alignment. As the result, the positions of the source and drain can be defined accurately.

Substrate structure for a thin film transistor

A TFT and an OLED device are provided. The TFT includes a substrate, a gate, a gate insulator, a source/drain layer, an isolated layer, and a channel layer. The gate is disposed on the substrate. The gate insulator is disposed on the substrate and covers the gate. The source/drain layer is disposed on the gate insulator, and exposes a portion of the gate insulator above the gate. The isolated layer is disposed on the source/drain layer and has an opening to expose a portion of the gate insulator and a portion of the source/drain layer above the gate. The channel layer is disposed in the opening of the isolated layer. Further, the channel layer is exposed by the opening and is electrically connected to the source/drain layer. On the other hand, the OLED device mainly includes a driving circuit and an organic electro-luminescent unit.

Thin film transistor and organic electro-luminescent display device

A structure of a thin film transistor (TFT) is provided. A substrate has a first surface and a second surface opposite to each other, in which the first surface has a patterned mask layer. A patterned first electrode layer is disposed on the second surface of the substrate and has a gate portion and a capacitor electrode portion. A patterned second electrode layer is disposed on the second surface of the substrate and has a source and a drain, in which the patterned second electrode layer is self-aligned with the patterned first electrode layer by exposing the first surface of the substrate with the patterned mask layer as a mask. An insulating layer is disposed between the patterned first electrode layer and the patterned second electrode layer.

Structure of thin film transistor

A method for making a thin film transistor (TFT) is provided. A mask is first formed on the backside of a substrate, and is used to fabricate a gate, source, and drain of the transistor by backside exposure, such that the source and drain can be self-aligned with the gate pattern. In this way, an alignment shift due to expansion or contraction after performing a high temperature process on an insulating layer can be avoided. Further, since the backside mask previously formed on the substrate can be shifted with the expansion or contraction of the substrate, the process is simplified. Moreover, the source/drain can be accurately aligned with the gate, so that parasitic capacitance can be reduced and flickering of the panel can be avoided.

Method for making thin film transistor

A method of fabricating a thin film transistor is provided. A gate is formed on a substrate. A gate insulator is formed on the substrate to cover the gate. A source/drain layer is formed on the gate insulator, and a portion of the gate insulator above the gate is exposed by the source/drain layer. An isolated layer is formed on the source/drain layer and has an opening to expose a portion of the gate insulator and a portion of the source/drain layer above the gate. A channel layer is formed in the opening of the isolated layer to be electrically connected to the source/drain layer, and the channel layer is exposed by the opening.

Method of fabricating thin film transistor and organic electro-luminescent display device

A method of fabricating a vertical thin film transistor (vertical TFT) is disclosed, wherein a shadow mask is used to fabricate the TFT device in vertical structure. First, a metal layer is formed, which serves as ribs and a gate layer. Next, a shadow mask is disposed on the gate layer. Afterwards, the shadow mask is used as a mask to form a source layer, an organic semiconductor layer and a drain layer. Thus, the process is simplified. Since no photolithography process is required, and therefore damage of the organic semiconductor layer is avoided and a vertical TFT with desired electrical characteristics may be obtained.

Method of fabricating vertical thin film transistor

This invention provides a circuit structure with a double-gate organic thin film transistor device and application thereof. A protection layer covered on an organic thin film transistor structure having a bottom gate is used as another gate insulating layer. A metal layer is formed on this gate insulating layer to serve as another gate. A double-gate structure is hence accomplished. The double-gate structure can be used in a circuit. By the double-gate structure the threshold voltage of the organic thin film transistor can be adjusted, and advantageously changing the characteristic of the organic thin film transistor to improve the accuracy of signal transmission.

Circuit structure with a double-gate organic thin film transistor device and application thereof

A cover-actuated keyboard encoding system is disclosed which can be used either alone or as a part of a universal remote control unit. It contains (a) a keyboard; (b) a memory for storing a plurality of control codes; (c) a special keyboard cover for covering the first keyboard; and (d) a computer program to convert the covered keys of the first keyboard into a control code. The keyboard cover is designed such that it contains one or more key-seat protrusions which are arranged such that they will be pressing against one or more of the first keys when the keyboard cover is closed. A CPU is programmed to scan the key board and convert the scanned keyboard value to a control code, in accordance with the number and locations of the keys that are being pressed during a power-on or a reset. This control code can be utilized as an initial code for identifying the brand and product type of the appliance to controlled by the universal remote control unit, thus allowing the universal remote control unit to operate as a conventional remote controller. The CPU can be further programmed to modify at least a portion of the initial control code if it detects that a universal key is pressed.

Growing community of inventors

Hsinchu, Taiwan

Yi-Kai Wang