Taiwan Semiconductor Manufacturing Comp. Ltd.

Yi-Kai Ciou

Ming Chyi Liu

Chien-Chih Chou

Yu-Chang Jong

Jhih-Bin Chen

Hung-Shu Huang

Jhu-Min Song

Yu-Lun Lu

Tsung-chieh Tsai

A semiconductor structure and forming method thereof are provided. A substrate includes a first region, a second region, and a boundary region defined between the first region and the second region. An isolation structure is disposed in the boundary region. An upper surface of the isolation structure has a stepped profile. A first boundary dielectric layer and a second boundary dielectric layer are disposed over the isolation structure. The first boundary dielectric layer is substantially conformal with respect to the stepped profile of the isolation structure.

Semiconductor structure and forming method thereof

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Taoyuan, Taiwan

Yi-Kai Ciou