Taiwan Semiconductor Manufacturing Comp. Ltd.

Global Unichip Corporation

Yi-Jung Liu

Joung-Wei Liou

Po-Wei Chiu

Ling-Chih Chou

Chester Tang

Huan-Wei Wu

A method for manufacturing a semiconductor structure is provided. The method for manufacturing a semiconductor structure includes forming an organosilicon layer over a substrate and etching the organosilicon layer to have a trench. The method for manufacturing a semiconductor structure further includes forming a conductive structure in the trench. In addition, the organosilicon layer is made of a material including Si&#x2014;C bonding and Si&#x2014;O bonding, and a ratio of an amount of the Si&#x2014;C bonding to an amount of the Si&#x2014;O bonding is greater than about 0.2.

Conductive structure in semiconductor structure and method for forming the same

Circuit with flat electromagnetic band gap resonance structure, includes a plurality of flat units formed at a conductor layer; each flat unit spirally revolves inward from a first end to an internal point following a rotation direction, and spirally revolves outward from the internal point to a second end following an opposite rotation direction. Each flat unit is connected to a ground plane by a conductive stand (e.g., a via) at a connection point, for suppressing noise resonances at certain frequencies, and the frequencies are related to a stub length of each flat unit, and the stub length is related to a route length from the connection point to an end.

Circuit with flat electromagnetic band gap resonance structure

Growing community of inventors

Hsinchu, Taiwan

Yi-Jung Liu