Taiwan Semiconductor Manufacturing Comp. Ltd.

Yi-Ju Hsu

Chi-Wen Liu

Horng-Huei Tseng

Cheng-Yi Peng

Hsin-Chieh Huang

Wen-Hsing Hsieh

Bor-Zen Tien

Jon-Hsu Ho

Song-Bor Lee

Wen-Yuan Chen

Yen-Ming Peng

Kuang-Hsin Chen

Yung-Hsien Wu

I-Chen Huang

Chin-Yu Chen

A method of manufacturing a semiconductor device, a plurality of fin structures are formed over a semiconductor substrate. The fin structures extend along a first direction and are arranged in a second direction crossing the first direction. A plurality of sacrificial gate structures extending in the second direction are formed over the fin structures. An interlayer dielectric layer is formed over the plurality of fin structures between adjacent sacrificial gate structures. The sacrificial gate structures are cut into a plurality of pieces of sacrificial gate structures by forming gate end spaces along the second direction. Gate separation plugs are formed by filling the gate end spaces with two or more dielectric materials. The two or more dielectric materials includes a first layer and a second layer formed on the first layer, and a dielectric constant of the second layer is smaller than a dielectric constant of the first layer.

Method of manufacturing semiconductor devices and semiconductor devices

A FinFET device includes a substrate, a fin formed on the substrate, and a gate electrode crossing the fin. The gate electrode includes a head portion and a tail portion, and the tail portion is connected to the head portion and extended toward the substrate. The width of the head portion is greater than that of the tail portion.

FinFET device and fabricating method thereof

A semiconductor device and method of manufacturing same are described. A first hafnium oxide (HfO) layer is formed on a substrate. A titanium (Ti) layer is formed over the first hafnium oxide layer. A second hafnium oxide layer is formed over the titanium layer. The composite device structure is thermally annealed to produce a high-k dielectric structure having a hafnium titanium oxide (HfTiO) layer interposed between the first hafnium oxide layer and the second hafnium oxide layer.

Method of manufacturing high-k dielectric using HfO/Ti/Hfo layers

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Zhudong, Taiwan

Yi-Ju Hsu