University of California

Yi Jing

Xinyu Bao

Yu-Hwa Lo

William Freeman

Gert Cauwenberghs

Cesare Soci

Deli Wang

Sohmyung Ha

Wei Wei

Massoud L Khraiche

E J Chichilnisky

Gabriel A Silva

Ke Sun

William R Freeman

Somhyung Ha

An integrated nanowire device includes a first array of nanowires having a first set of characteristics and a second array of nanowires having a second set of characteristics. A processor is electrical communication with the first and second arrays of nanowires receives the first plurality of charges and generate a processor signal therefrom. The second array of nanowires may be configured to produce a stimulation current in response to the processor signal. The first or second array may be used to generate power for operation of the device, or the arrays may function as a stimulator, sensor combination to enable the device to self-regulate based on localized responses to stimulation. The device may be implanted for use as a neural stimulator.

Integrated nanowire array devices for detecting and/or applying electrical signals to tissue

Embodiments of the invention provide a method for direct heteroepitaxial growth of vertical III-V semiconductor nanowires on a silicon substrate. The silicon substrate is etched to substantially completely remove native oxide. It is promptly placed in a reaction chamber. The substrate is heated and maintained at a growth temperature. Group III-V precursors are flowed for a growth time. Preferred embodiment vertical Group III-V nanowires on silicon have a core-shell structure, which provides a radial homojunction or heterojunction. A doped nanowire core is surrounded by a shell with complementary doping. Such can provide high optical absorption due to the long optical path in the axial direction of the vertical nanowires, while reducing considerably the distance over which carriers must diffuse before being collected in the radial direction. Alloy composition can also be varied. Radial and axial homojunctions and heterojunctions can be realized. Embodiments provide for flexible Group III-V nanowire structures. An array of Group III-V nanowire structures is embedded in polymer. A fabrication method forms the vertical nanowires on a substrate, e.g., a silicon substrate. Preferably, the nanowires are formed by the preferred methods for fabrication of Group III-V nanowires on silicon. Devices can be formed with core/shell and core/multi-shell nanowires and the devices are released from the substrate upon which the nanowires were formed to create a flexible structure that includes an array of vertical nanowires embedded in polymer.

Vertical group III-V nanowires on si, heterostructures, flexible arrays and fabrication

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La Jolla, CA, United States of America

Yi Jing