Vanguard International Semiconductor Corporation

Yi-Hsun Chung

Jui-Lung Chen

Chia-Chiuan Chang

Wei-Shung Chen

Ho-Hsiang Chen

Gia-Hua Hsieh

Yu-Chih Yeh

A burn-in method for SRAMs and chips. For a memory cell of the SRAM, the SRAM burn-in method controls the control signals of the memory cell to generate current paths to pass through the memory cell, the corresponding bit-line and the corresponding bit-line-bar. The contacts/vias in the current paths are tested by providing burn-in currents to flow through the current paths, so that mismatched contacts/vias are burned by the burn-in currents. SRAMs that fail the burn-in test are abandoned after the burn-in procedure.

Burn-in methods for static random access memories and chips

A static random access memory comprising a column driver, a row driver, a cell, and a control unit is disclosed. The column driver selects a first word line or a second word line. The row provides data to a first bit line and a second bit line. The data of the first bit line is opposite to that of the second bit line. The control unit controls the voltage of the cell. In normal mode, the voltage of the cell is equal to a second voltage. In stand-by mode, the voltage of the cell exceeds the second voltage.

Static random access memory

A memory system is provided, comprising at least one memory unit and a source power supply circuit. Each memory unit is coupled between a source voltage and a ground voltage and accesses digital data according to a word line signal and a bit line signal. The source power supply circuit provides the source voltage to the memory units. When the memory unit is in a writing status, the source voltage is the first power voltage. When the memory unit is in a reading status, the source voltage is the second power voltage. The second power voltage equals to the first power voltage subtracted by a specific voltage for avoiding rewriting error.

Growing community of inventors

Miaoli County, Taiwan

Yi-Hsun Chung