Mediatek Corporation

Taiwan Semiconductor Manufacturing Comp. Ltd.

Yi-Hsuan Lin

Cheng-Ming Lin

Hao-Ming Chang

Chung-Yang Huang

Yu-Hsin Hsu

Kuan-Shien Lee

Wang Cheng Shih

Ming Che Li

Po-Cheng Lai

Wei-Hsin Lin

Wei-Jen Chen

Chih-Yuan Lin

Ming-Yuan Cheng

Wei-Yu Lai

Chih-Chieh Lai

Hsin-Hsien Huang

Han-Chun Chang

Yi-Ying Huang

A power-adjusting method for uplink transmission is provided. The power-adjusting method is applied to user equipment (UE). In response to the UE transmitting a first packet carrying a specific message to a network node, the power-adjusting method includes the UE increasing the transmission power to transmit the first packet.

Modem performance enhancement via smart transmission power distribution

A method for improving transmission power management with compliance to regulations of radiofrequency exposure, which may comprise: at a current time, estimating whether a window average power, which may reflect average power transmitted using a radio technology during a moving time window, will exceed a power limit after the current time; if true, proceeding to at least one of a first handling subroutine and a second handling subroutine to set a power cap, and causing power transmitted to be capped by the power cap after the current time. The first handling subroutine may comprise: scheduling to set the power cap lower at a scheduled time. Estimating whether the window average power will exceed the power limit may involve discarding one of a plurality of power records. The second handling subroutine may comprise: setting the power cap not higher than the discarded one of the plurality of power records.

Method for improving transmission power management with compliance to regulations of radiofrequency exposure

A method for forming a semiconductor device includes receiving a substrate having a first opening and a second opening formed thereon, wherein the first opening has a first width, and the second opening has a second width less than the first width; forming a protecting layer to cover the first opening and expose the second opening; performing a wet etching to widen the second opening with an etchant, wherein the second opening has a third width after the performing of the wet etching, and the third width of the second opening is substantially equal to the first width of the first opening; and performing a photolithography to transfer the first opening and the second opening to a target layer.

Method for forming semiconductor device

A method for forming a photomask includes receiving a substrate having a first layer formed thereon, wherein a patterned second layer exposing portions of the first layer is disposed over the substrate, removing the exposed portions of the first layer through the patterned second layer to form a plurality of openings in the first layer, removing the patterned second layer, and performing a wet etching to remove portions of the first layer to widen the plurality of openings with an etchant. The etchant is in contact with a top surface of the first layer and sidewalls of the plurality of openings. Each of the plurality of openings has a first width prior to the performing of the wet etching and a second width after the performing of the wet etching. The second width is greater than the first width.

Photomask and method for forming the same

A method for analysis of thread latency includes: determining a thread of interest; computing a summation of time periods in which the thread of interest stays in a run queue to determine a thread in-run-queue time; computing a summation of time periods in which the thread of interest is preempted by other threads to determine a thread preempted time; and evaluating thread latency of the thread of interest according to the thread preempted time to the thread in-run-queue time.

Method and apparatus for analysis of thread latency

Growing community of inventors

Hsinchu, Taiwan

Yi-Hsuan Lin