Taiwan Semiconductor Manufacturing Comp. Ltd.

Dell Products Inc.

Yi-Hsuan Chen

Kuo-Ching Huang

Yi Ching Ong

Kuen-Yi Chen

Yu-Wei Ting

Wei Ting Hsieh

Harry-Hak-Lay Chuang

Jordan C Hogan

A server rack includes a power distribution unit, a first side panel and a second side panel. The power distribution unit is affixed to an outward side of the server rack at a rearward end of the server rack. The first side panel is located at the rearward end of the server rack and covers the first PDU. The first side panel has a first width. The second side panel has a second width, A sum of the first width and the second width is substantially equal to a depth of the server rack.

Server rack side wall mounting mechanism

A semiconductor device includes a first capacitor having a ferroelectric film disposed between two electrodes, a second capacitor, having another dielectric film disposed between two electrodes. A first voltage is applied across the first capacitor such that the ferroelectric film is polarized, altering the effective resistance through the device. A second voltage is applied across the first capacitor, such that a leakage current transits the ferroelectric film, and accumulates along an electrode of the second capacitor, and the gate of a transistor, thereby effecting a change to the drain to source resistance of the transistor which may be measured to determine the polarization state of the ferroelectric film.

Ferroelectric tunnel junction memory devices with enhanced read window

A semiconductor device includes a ferroelectric tunnel junction (FTJ), wherein the ferroelectric tunnel junction includes a first electrode, a ferroelectric layer disposed over the first electrode, and a second electrode disposed over the ferroelectric layer. The first electrode contains nitrogen or oxygen and is characterized by a first percentage of nitrogen or oxygen. The second electrode contains nitrogen or oxygen and is characterized by a second percentage of nitrogen or oxygen. The first percentage is different from the second percentage.

Ferroelectric tunnel junctions with conductive electrodes having asymmetric nitrogen or oxygen profiles

The present disclosure relates to an integrated chip including a first metal layer over a substrate. A second metal layer is over the first metal layer. An ionic crystal layer is between the first metal layer and the second metal layer. A metal oxide layer is between the first metal layer and the second metal layer. The first metal layer, the second metal layer, the ionic crystal layer, and the metal oxide layer are over a transistor device that is arranged along the substrate.

Integrated chip with solid-state power storage device

A method according to the present disclosure includes forming a bottom electrode layer over a substrate, forming an insulator layer over the bottom electrode layer, depositing a semiconductor layer over the bottom electrode layer, depositing a ferroelectric layer over the semiconductor layer, forming a top electrode layer over the ferroelectric layer, and patterning the bottom electrode layer, the insulator layer, the semiconductor layer, the ferroelectric layer, and the top electrode layer to form a memory stack. The semiconductor layer includes a plurality of portions with different thicknesses.

Memory device structure and manufacturing method thereof

A cable management system for a server rack, including an adapter bracket coupled to the server rack; a rail assembly coupled to the adapter bracket, the rail assembly including a plurality of apertures; a cable management apparatus slideably coupled to the rail assembly, the cable management apparatus including: a plunger; a plurality of tabs; and a plurality of retention devices, wherein, when the cable management apparatus is coupled to the rail assembly, the plunger extends through one of the apertures to define a position of the cable management apparatus with respect to the rail assembly such that one or more cables of the server rack are positioned between opposing tabs of the plurality of tabs and coupled to the cable management apparatus by one or more of the retention devices.

Cable management system for a server rack

A server information handling system rack has an adjustable depth to fit different sized server rack sleds and adapt the rack to different sized data centers. Fixed vertical supports couple to fixed horizontal supports to define a rack interior that adjusts in depth by sliding horizontal supports that change a position of extensible vertical supports coupled to the sliding horizontal supports. When a desired rack depth is set, the fixed horizontal supports and sliding horizontal supports are affixed to each other, such as with a screw that couples to a threaded nut of the fixed horizontal support.

Growing community of inventors

Taoyuan, Taiwan

Yi-Hsuan Chen