Epistar Corporation

Yi Hsiao

Shih-Chang Lee

Wen-Luh Liao

Yung-Fu Chang

Chia-Liang Hsu

Yi-Chieh Lin

Yao-Ru Chang

Shiuan-Leh Lin

Mei-Chun Liu

Hong-Chi Shih

Ko-Yin Lai

Hung-Ta Cheng

Cheng-Long Yeh

Chih-Chaing Yang

Hsiang Chang

Fan-Lei Wu

This disclosure discloses an optical sensing device. The device includes a carrier body having a topmost surface; a first light-emitting device disposed on the carrier body and having a light-emitting surface; and a light-receiving device comprising a group III-V semiconductor material disposed on the carrier body and having a light-receiving surface. The light-emitting surface is separated from the topmost surface by first distant H, the light-receiving surface is separated from the topmost surface by a second distance H, and His different from H

Optical sensing device and optical sensing system thereof comprising light emitting device and light receiving device completely sandwiched by the topmost surface and bottommost surface of a carrier body with different vertically separated distances

A semiconductor device and a package structure are provided. The semiconductor device includes a substrate, a light-emitting structure, a first semiconductor layer, a second semiconductor layer and a first electrode. The light-emitting structure is on the substrate. The first semiconductor layer is on the light-emitting structure. The second semiconductor layer is between the first semiconductor layer and the light-emitting structure. The first electrode is on the second semiconductor layer. At least a portion of the first electrode is separated from the first semiconductor layer.

Semiconductor device and package structure

A semiconductor structure includes a carrier having a surface, a supporting element, a semiconductor stack and a bridge layer. The supporting element is on the surface. The semiconductor stack is on the surface and has a side surface. The bridge layer includes a first portion connecting to the supporting element, a second portion, and a third portion connecting to the semiconductor stack. The second portion is extended from the third portion toward the first portion and is protruded from the side surface.

Semiconductor structure having a bridge layer

This disclosure discloses an optical sensing device. The device includes a carrier body; a first light-emitting device disposed on the carrier body; and a light-receiving device including a group III-V semiconductor material disposed on the carrier body, including a light-receiving surface having an area, wherein the light-receiving device is capable of receiving a first received wavelength having a largest external quantum efficiency so the ratio of the largest external quantum efficiency to the area is &#x2265;13.

Optical sensing device and optical sensing system thereof comprising a light receiving device capable of receiving a first received wavelength having a largest external quantum efficiency

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Hsinchu, Taiwan

Yi Hsiao