United Microelectronics Corp.

Yi-How Chou

Chih-Sheng Chang

Kun-Chen Ho

Tsung-Yin Hsieh

Shih-Chun Tsai

Tzu-Hao Fu

Yang-Chou Lin

A metal interconnect structure includes a first metal interconnection in an inter-metal dielectric (IMD) layer on a substrate, a second metal interconnection on the first metal interconnection, and a cap layer between the first metal interconnection and the second metal interconnection. Preferably, a top surface of the first metal interconnection is even with a top surface of the IMD layer and the cap layer is made of conductive material.

Metal interconnect structure having cap layer with different thicknesses and method for fabricating the same

A method for fabricating metal interconnect structure includes the steps of: forming a first metal interconnection in a first inter-metal dielectric (IMD) layer on a substrate; forming a cap layer on the first metal interconnection; forming a second IMD layer on the cap layer; performing a first etching process to remove part of the second IMD layer for forming an opening; performing a plasma treatment process; and performing a second etching process to remove polymers from bottom of the opening.

Metal interconnect structure and method for fabricating the same

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Taipei, Taiwan

Yi-How Chou