Taiwan Semiconductor Manufacturing Comp. Ltd.

Yi-Heng Tsai

Chun-Ren Cheng

Wei-Cheng Shen

Tzu-Heng Wu

Yi-Hsien Chang

Fu-Chun Huang

Li-Chen Yen

Chun-Wen Cheng

Chia-Hua Chu

Chen Hsiung Yang

Cheng San Chou

Yi-hsien Chang

A method of fabricating a semiconductor structure includes: providing a first wafer; providing a second wafer having a first surface and a second surface opposite to the first surface; contacting the first surface of the second wafer with the first wafer; and forming a plurality of scribe lines on the second surface of the second wafer, wherein the formation of the plurality of scribe lines includes removing portions of the second wafer from the second surface towards the first surface to form a third surface between the first surface and the second surface, and the plurality of scribe lines protrudes from the third surface of the second wafer.

Semiconductor structure including scribe line structures and method for fabricating the same

A method of fabricating a semiconductor structure includes: providing a first wafer; providing a second wafer having a first surface and a second surface opposite to the first surface; contacting the first surface of the second wafer with the first wafer; and forming a plurality of scribe lines on the second surface of the second wafer; wherein the plurality of scribe lines protrudes from a third surface of the second wafer, and the third surface is between the first surface and the second surface.

Semiconductor structure and method for fabricating the same

A semiconductor structure includes a first substrate, a second substrate disposed over the first substrate, and including a first surface, a second surface opposite to the first surface, a via portion extending between the first surface and the second surface, a first through hole and a second through hole, and a device disposed over the second surface, and including a dielectric layer, a backplate at least partially exposed from the dielectric layer and a membrane at least partially exposed from the dielectric layer and disposed between the backplate and the first substrate, wherein the via portion is disposed within the second through hole, and the dielectric layer is bonded with the second substrate, and the device is electrically connected to the first substrate through the via portion.

Semiconductor structure and manufacturing method thereof

A method of manufacturing a semiconductor structure includes receiving a first substrate including a dielectric layer disposed over the first substrate; forming a sensing structure and a bonding structure over the dielectric layer; disposing a conductive layer on the sensing structure; disposing a barrier layer over the dielectric layer; removing a first portion of the barrier layer to at least partially expose the conductive layer on the sensing structure; and removing a second portion of the barrier layer to at least partially expose the bonding structure.

A semiconductor structure includes a substrate, a dielectric layer disposed over the substrate, a sensing structure disposed over the dielectric layer, a bonding structure disposed over the dielectric layer, a conductive layer covering the sensing structure, and a barrier layer disposed over the dielectric layer, the conductive layer and the bonding structure, wherein the conductive layer and the bonding structure are at least partially exposed from the barrier layer.

A three-dimensional (3D) integrated circuit (IC) includes a first IC and a second IC. The first IC includes a MEMS device and a first bonding structure. The second IC includes a second bonding structure. The first and second bonding structures are bonded together to couple the first IC to the second IC. A conformal barrier layer is disposed over a surface of the second IC nearest the first IC. An etch isolation structure is arranged beneath the surface of the second IC and encloses a sacrificial region which is arranged on either side of the second bonding structure and which is arranged in the second IC.

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Hsinchu, Taiwan

Yi-Heng Tsai