Applied Materials, Inc.

Google Inc.

Character Technologies Inc.

Yi Cui

Soo Young Choi

Subir Jhanb

Beom Soo Park

Tae Kyung Won

Dong-Kil Yim

Jiarui Wang

Thomas R Kennedy, Iii

Jung Bae Kim

Rodney Shunleong Lim

Nandita Dukkipati

Dong Kil Yim

Keon Jang

Inho Cho

David Wetherall

Robin L Tiner

Suhail Anwar

Seon-Mee Cho

Gaku Furuta

Qunhua Wang

Xuena Zhang

William Norman Sterling

Young Jin Choi

Prajit Ramachandran

Dongsuh Lee

Weijie Wang

Jinhyun Cho

A real-time audio stream associated with a user is segmented into one or more chunks of audio. The one or more segmented chunks of audio are provided to an audio understanding model. It is determined that the user is finished with their turn in a conversation. In response to determining that the user has finished with their turn in the conversation, a response is provided based on the real-time audio stream.

Audio turn understanding system

Methods, systems, and apparatus, including computer programs encoded on computer storage media, for a watermark-based message queue. One of the methods includes receiving a first connection request for messages associated with a user device. A first connection session is established with the user device. A message queue of messages associated with the user device is identified, each message in the message queue is associated with a respective timestamp, and the message queue is associated with a current watermark that identifies a first timestamp. An oldest message in the message queue at the time the first connection session was established is identified. An updated watermark that identifies a second timestamp associated with the oldest message is associated with the message queue. One or more messages that have a timestamp newer than or equal to the first timestamp identified by the current watermark is provided to the user device.

Watermark-based message queue

Techniques are disclosed for methods of post-treating an etch stop or a passivation layer in a thin film transistor to increase the stability behavior of the thin film transistor.

Plasma treatment on metal-oxide TFT

Embodiments of the present disclosure generally relate to nitrogen-rich silicon nitride and methods for depositing the same, and transistors and other devices containing the same. In one or more embodiments, a passivation film stack is provided and includes a silicon oxide layer disposed on a workpiece, a nitrogen-rich silicon nitride layer disposed on the silicon oxide layer, and a hydrogen-rich silicon nitride layer disposed on the nitrogen-rich silicon nitride layer. The hydrogen-rich silicon nitride layer has a greater hydrogen concentration than the nitrogen-rich silicon nitride layer.

Nitrogen-rich silicon nitride films for thin film transistors

A method including: receiving, from an application executing on a computing device and by an authentication process executing on the computing device, data representative of user credentials corresponding to the application, the authentication process being isolated from the application; packaging, by the authentication process, the data representative of user credentials with a device identification assigned to the computing device and an indication that the user credentials correspond to the application, the device identification being hidden from the application; outputting for transmission, by the authentication process and to an authentication server, an authentication request containing the packaged user credentials and device identification; receiving, by the authentication process and from the authentication server, an indication of authentication of the user credentials; and forwarding the received indication from the authentication process to the application.

Two-factor authentication systems and methods

Systems and methods for controlling congestion in a data network are provided. A base target round-trip time (RTT) for packets of a network flow including packets transmitted from a source network device to destination network device is obtained. A number of hops packets associated with the network flow traverse between the source network device and the destination network device is determined. A topology scaled target RTT for the network flow is determined based on the base target RTT and the determined number of hops. A congestion window size for the network flow is managed based on the topology scaled target RTT.

Congestion control for low latency datacenter networks

Embodiments of the present disclosure generally relate to nitrogen-rich silicon nitride and methods for depositing the same, and transistors and other devices containing the same. In one or more embodiments, methods for depositing silicon nitride materials are provided and include heating a workpiece to a temperature of about 200&#xb0; C. to about 250&#xb0; C., exposing the workpiece to a deposition gas during a plasma-enhanced chemical vapor deposition process, and depositing a nitrogen-rich silicon nitride layer on the workpiece. The deposition gas contains a silicon precursor, a nitrogen precursor, and a carrier gas. A molar ratio of the silicon precursor to the nitrogen precursor to the carrier gas within the deposition gas is about 1:a range from about 4 to about 8:a range from about 20 to about 80, respectively.

Embodiments of the present disclosure generally relate to nitrogen-rich silicon nitride and methods for depositing the same, and transistors and other devices containing the same. In one or more embodiments, a passivation film stack contains a silicon oxide layer disposed on a workpiece and a nitrogen-rich silicon nitride layer disposed on the silicon oxide layer. The nitrogen-rich silicon nitride layer has a silicon concentration of about 20 at % to about 35 at %, a nitrogen concentration of about 40 at % to about 75 at %, and a hydrogen concentration of about 10 at % to about 35 at %. In one or more examples, the passivation film stack contains the silicon oxide layer, the nitrogen-rich silicon nitride layer, and a third layer containing any type of silicon nitride, such as nitrogen-rich silicon nitride and/or hydrogen-rich silicon nitride.

Embodiments of the present disclosure generally relates a shadow frame including two opposing major side frame members adjacent to two opposing minor side frame members coupled together with a corner bracket, wherein the corner bracket includes a corner inlay having legs that extend in directions generally orthogonal to each other.

Shadow frame with sides having a varied profile for improved deposition uniformity

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San Jose, CA, United States of America

Yi Cui