United Microelectronics Corp.

Yi-Chun Teng

Ping-Chia Shih

Wen-Lin Wang

Wan-Chun Liao

Kuei-Ya Chuang

Ming-Che Tsai

Chuang-Hsin Chueh

Ssu-Yin Liu

Po-Hsien Chen

The present application discloses a semiconductor structure and a manufacturing method thereof. The semiconductor structure comprises a substrate, a gate dielectric layer, a floating gate, a first dielectric layer and a control gate. The gate dielectric layer is disposed on the substrate. The floating gate is disposed on the gate dielectric layer and has at least one tip on a top surface of the floating gate. The first dielectric layer is disposed on the floating gate. The control gate is disposed above the first dielectric layer and at least partially overlaps the floating gate.

Semiconductor structure and manufacturing method thereof

A device for generating a security key includes a substrate, semiconductor units, contact structures, and defects. The semiconductor units are disposed on the substrate. The contact structures are disposed on and connected with the semiconductor units. The defects are disposed in at least a part of the contact structures randomly. A manufacturing method of a device for generating a security key includes the following steps. First semiconductor units are formed on a substrate. First contact structures are formed on the first semiconductor units. The first contact structures are connected with the first semiconductor units, and defects are formed in at least a part of the first contact structures randomly.

Device for generating security key and manufacturing method thereof

Growing community of inventors

Taichung, Taiwan

Yi-Chun Teng