Macronix International Co., Ltd.

Skymedi Corporation

Yi-Chun Liu

Ting-Yu Liu

Nai-Ping Kuo

Tzu-Yi Yang

Zheng Wu

Wei Jie Chen

Ching Ting Lu

Shih-Chou Juan

Yuchih Yeh

Jian-Shing Liu

Naiping Kuo

Yiching Liu

Yu-Tang Chang

A memory controller managing a memory device receives a memory read command from a host device that is communicably coupled to the memory device. The memory device includes a storage memory comprising a first type of memory cells and a cache memory comprising a second type of memory cells. The memory controller determines, from the memory read command, a physical address of a target memory location in the storage memory indicated by the memory read command. The memory controller executes a read operation on the target memory location corresponding to the physical address. The memory controller determines a read attribute of the target memory location. Conditioned on determining that the read attribute satisfies one or more threshold conditions, the memory controller programs an entry in the cache memory with information corresponding to the target memory location.

Read performance of memory devices

A memory device includes a memory cell array and a memory controller. The memory cell array includes a plurality of memory blocks. Each of the memory blocks includes a plurality of word lines. A plurality of memory chunks is coupled to at least one of the word lines. The memory controller is configured to program data to a particular memory chunk of the plurality of memory chunks by performing a chunk operation that includes selecting a particular word line from the plurality of word lines, selecting a particular memory chunk from the plurality of memory chunks that are coupled to the particular word line, and applying a program voltage to a particular memory block corresponding to the particular memory chunk to program data to the particular memory chunk.

Programming a memory device

Systems, methods, and apparatus including computer-readable mediums for managing open blocks in memory systems such as NAND flash memory devices are provided. In one aspect, a method includes: evaluating a read disturbance level of an open block in a memory, the open block having one or more programmed word lines and one or more blank word lines, and in response to determining that the read disturbance level of the open block is beyond a threshold level, managing each memory cell in at least one of the blank word lines to have a smaller data storing capacity than each memory cell in at least one of the one or more programmed word lines so as to reduce impact of read disturbance.

Managing open blocks in memory systems

Systems, methods, and apparatus including computer-readable mediums for managing open blocks in memory systems such as NAND flash memory devices are provided. In one aspect, a memory system includes a memory and a memory controller. The memory includes multiple blocks each having a plurality of word lines. The memory controller is coupled to the memory and configured to: evaluate a read disturbance level of an open block, the open block having one or more programmed word lines and one or more blank word lines, and in response to determining that the read disturbance level of the open block is beyond a threshold level, manage each memory cell in at least one of the blank word lines to have a smaller data storing capacity than each memory cell in at least one of the one or more programmed word lines so as to reduce impact of read disturbance.

A memory device and an access method applied to the memory device are provided. The memory device is electrically connected to a host, and the memory device includes a memory circuit and a memory controller. The memory circuit includes a first memory array and a second memory array. The first memory array and the second memory array respectively provide a first physical space and a second physical space. The memory controller receives an access command from the host. The memory controller performs the access command to the first physical space when the access command is a first type of command, and the memory controller performs the access command to the second physical space when the access command is a second type of command.

Memory device with multiple physical spaces, multiple non-volatile memory arrays, multiple main data, multiple metadata of multiple types of commands, and access method thereof

A request is received to access physical information of a memory unit included in a memory device. A determination is made whether the physical information is available in a physical information table present in a memory cache. If the physical information of the memory unit is available in the table, the physical information is accessed from the table. If the physical information is not available in the table, a global directory in the memory cache is accessed, which indicates locations in a non-volatile memory that store the total number of the physical information blocks. From the global directory, a particular location in the non-volatile memory storing a particular physical information block that includes the physical information of the memory unit is determined. The particular physical information block is loaded into the table and the physical information of the memory unit is accessed from the particular physical information block.

Methods and systems for managing physical information of memory units in a memory device

Methods, systems and apparatus including computer-readable mediums for partially erasing blocks in a memory system to increase reliability are provided. In one aspect, a memory system includes a memory having a plurality of blocks and a memory controller coupled to the memory. The memory controller is configured to: execute a first erase operation on a particular block in the memory, the particular block including multiple sub-blocks each having respective memory cells, one or more memory cells in the particular block being in one or more programmed states before the first erase operation, then execute a second erase operation on a first sub-block of the particular block such that first respective memory cells of the first sub-block are in an erased state after the second erase operation. The memory controller can be configured to not execute the second erase operation on the one or more other sub-blocks of the particular block.

Memory system, memory controller, and memory control method

A memory system, a controller, a memory and a reading method thereof are provided. The reading method includes the following steps. A plurality of duplicated contents which are formed by duplicating one data content several times are received by a voting circuit. A voting procedure is performed by the voting circuit to obtain a voted content which is a majority of the duplicated contents.

Memory system, controller, memory and reading method thereof

A controlling method, a channel operating circuit and a memory system for executing a plurality of memory dies with single channel are provided. The plurality of memory dies correspond to a plurality of queue sections of a command queue. The controlling method comprises the following steps: A selecting unit selects one of the plurality of queue sections corresponding one of the plurality of memory dies which is riot at a busy state. An executing unit executes a command stored in one of the plurality of queue sections which is selected.

Controlling method, channel operating circuit and memory system for executing memory dies with single channel

Systems, methods, and apparatus including computer-readable mediums for managing data arrangement in a super block in a memory such as NAND flash memory are provided. In one aspect, a memory controller includes control circuitry coupled to the memory having at least two planes of physical blocks and configured to determine one or more characteristics of data to be written, allocate a super page of a super block based on the determined characteristics of the data and block information of the physical blocks of the planes, the super block combining one or more physical blocks from the planes, the super page combining one or more single pages from the corresponding one or more physical blocks in the super block, arrange the data to the one or more single pages in the super page, and program the super page to write the data in the one or more single pages.

Managing data arrangement in a super block

A memory system includes a first flash memory, a second flash memory and a controller. The first flash memory includes a memory array divided into a plurality of pages. The controller is coupled to the first flash memory and the second flash memory and configured to: control the second flash memory to record an address of a particular page in the first flash memory before programming the particular page; and control the second flash memory to record a program status of the particular page after the particular page has been programed.

Memory system and operating method thereof

A request is received to load a particular overlay segment from a secondary storage memory to a main memory for execution by a processor, wherein the particular overlay segment is absent from the main memory. A determination is made whether the main memory can receive the particular overlay segment. In response to determining that the main memory cannot receive the particular overlay segment, eviction strategy information about one or more existing overlay segments that are present in the main memory is obtained. Based on the eviction strategy information, at least one of the one or more existing overlay segments is selected for eviction from the main memory. The particular overlay segment is retrieved from the secondary storage memory. The at least one of the one or more existing overlay segments in the main memory that is selected for eviction is replaced with the particular overlay segment.

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Zhubei, Taiwan

Yi-Chun Liu