E Ink Holdings Inc.

Yi-Chun Lai

Hsiao-Wen Zan

Wei-Tsung Chen

Chuang-Chuang Tsai

Pei-Chen Yu

Hung-Chuan Liu

Bing-Shu Wu

An active device provided by the invention is disposed on a substrate and includes a gate, a gate insulating layer, an oxide semiconductor channel layer, a plurality of nano conductive wires, a source and a drain. The gate insulating layer is disposed between the gate and the oxide semiconductor channel layer. The nano conductive wires are distributed in the oxide semiconductor channel layer, in which the nano conductive wires do not contact the gate insulating layer and the nano conductive wires are arranged along a direction and not intersected with each other. The source and the drain are disposed on two sides opposite to each other of the oxide semiconductor channel layer, in which a portion of the oxide semiconductor channel layer is exposed between the source and the drain.

Growing community of inventors

Hsinchu, Taiwan

Yi-Chun Lai