Epistar Corporation

Industrial Technology Research Institute

Yi-Ching Lee

Rong-Ren Lee

Ming-Siang Huang

Kuo-Feng Huang

Ming-Ta Chin

Cheng-Long Yeh

Chih-Chiang Lu

Chun-Yu Lin

Yi-Chieh Lin

Yu-Ren Peng

Yung-Fu Chang

Cheng-Yu Lee

Jir-Mehng Lo

Ying-Chu Shih

Ying-Fei Tsai

Ming-Tzung Liou

Chia-Hung Lin

Shih-Chang Lee

Lain-Tze Lee

Cheng-Hsing Chiang

Kuo-Kuei Huang

Shih-Hao Cheng

Tien-Soung Tong

Jenn-Line Sheu

Jui-Hung Yen

Shih-Nan Yen

Yen-Chun Tseng

Jui-Che Sung

Yi-Cheng Cheng

Jennline Sheu

Hui-Ju Liang

Bie-Shung Tsai

A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first dopant. The second semiconductor structure is located on the first semiconductor structure and includes a second dopant different from the first dopant. The active region includes a plurality of semiconductor pairs and located between the first semiconductor structure and the second semiconductor structure. Each semiconductor pair includes a barrier layer and a well layer and includes the first dopant. The active region does not include a nitrogen element. A doping concentration of the first dopant in the first semiconductor structure is higher than a doping concentration of the first dopant in the active region.

Semiconductor device and semiconductor component including the same preliminary class

A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first dopant. The second semiconductor structure is located on the first semiconductor structure and includes a second dopant different from the first dopant. The active region includes a plurality of semiconductor pairs and is located between the first semiconductor structure and the second semiconductor structure. One of the plurality of semiconductor pairs has a barrier layer and a well layer and includes the first dopant. The barrier layer has a first thickness and a first Al content, and the well layer has a second thickness and a second Al content, the second thickness is less than the first thickness, and the second Al content is less than the first Al content.

Semiconductor device and semiconductor component including ihe same

An optoelectronic device includes a semiconductor stack including a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface. The second contact layer is not overlapped with the first contact layer in a vertical direction. The second contact layer includes a plurality of dots separating to each other and formed of semiconductor material.

Optoelectronic device and the manufacturing method thereof

A light-emitting device includes: a light-emitting stack including a first active layer emitting a first light having a first peak wavelength; a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; and a tunneling junction between the diode and the light-emitting stack, wherein the tunneling junction includes a first tunneling layer and a second tunneling layer on the first tunneling layer, the first tunneling layer has a band gap and a thickness of the first tunneling layer is greater than a thickness of the second tunneling layer.

Light-emitting device with tunnel junction

An optoelectronic device includes a semiconductor structure having a first side and a second side opposite to the first side, a first pad at the first side, a first finger connected to the electrode pad and having a first width, an insulating layer at the second side and comprising a first part under the first finger, the first part having a bottom surface with a second width larger than the first width and a side surface inclined to the bottom surface, and a contact layer covering the bottom surface and the side surface.

The present disclosure is related to an optoelectronic device comprising a semiconductor stack comprising a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface, wherein the second contact layer is not overlapped with the first contact layer in a vertical direction; wherein the second contact layer comprises a plurality of dots separating from each other and formed of semiconductor material.

A light-emitting device is provided. comprises: a light-emitting stack comprising an active layer emitting a first light having a first peak wavelength &#x3bb; nm; and an adjusting element stacked on and electrically connected to the active layer, wherein the adjusting element comprises a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; wherein a forward voltage of the light-emitting device is between (1240/0.8&#x3bb;) volt and (1240/0.5&#x3bb;) volt, and a ratio of the intensity of the first light emitted from the active layer at the first peak wavelength to the intensity of the second light emitted from the diode at the second peak wavelength is greater than 10 and not greater than 1000.

Light-emitting device

A light-emitting device is provided. The light-emitting device comprises: a light-emitting stack having an active layer emitting first light having a peak wavelength &#x3bb; nm; and an adjusting element stacked electrically connected to the active layer in series for tuning a forward voltage of the light-emitting device; wherein the forward voltage of the light-emitting device is between (1240/0.8&#x3bb;) volt and (1240/0.5&#x3bb;) volt.

Light-emitting device with adjusting element

An extract ofsp. in use of arthritis treatment is provided. The extract ofsp. and an active ingredient contained therein, antofine, are applicable to a method, pharmaceutical composition and dietary supplement for treatment of arthritis. A mass production of antofine from plant extracts is also provided.

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A pharmaceutical composition for alleviating or treating gout and the applications thereof are provided. The pharmaceutical composition includes p-coumaryl diacetate as an active ingredient.

Pharmaceutical composition for alleviating or treating gout and uses thereof

A pharmaceutical composition with an immunomodulating function is provided, including an extract ofobtained by grinding the, adding the groundto a solvent and isolating the extract from the solvent, wherein thecomprisesand Bupleurums with at least one of the nucleotide sequences selected from a group consisting of SEQ ID NOs. 1&#x2dc;6 and a nucleotide sequence with no more than 1% of the nucleotide sequence divergences of SEQ ID NOs. 1&#x2dc;6, or combinations thereof.

Growing community of inventors

Hsinchu, Taiwan

Yi-Ching Lee