Taiwan Semiconductor Manufacturing Comp. Ltd.

Yi-Chieh Hsieh

Kuei-Ming Chang

Chi-Wei Wu

A semiconductor device includes a substrate, a shallow trench isolation (STI) structure, a first source/drain, a second source/drain, and an isolation dielectric. The substrate has a semiconductor fin. The STI structure surrounds the semiconductor fin. The first source/drain is embedded in the semiconductor fin. The second source/drain is embedded in the semiconductor fin. The isolation dielectric is between the first and second source/drains and extending into the semiconductor fin. An upper surface of the STI structure is free from coverage of the isolation dielectric.

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Hsinchu, Taiwan

Yi-Chieh Hsieh