National Yang Ming Chiao Tung University

Yi-Chia Chou

Chih Hung Chen

Wei-Lan Chiu

Ying-Hao Chu

Wan-Jung Lo

A method for fabricating heteroepitaxial semiconductor material on a mica sheet is disclosed. Firstly, a mica substrate is provided. Then, at least one semiconductor film is deposited on the mica substrate to form a flexible substrate whose flexibility is applied to various applications, such as wearable devices, portable photoelectric equipment, or improving the speed and bandwidth of commercial and military systems, such that the flexible substrate has the competitiveness in the market.

Method for fabricating heteroepitaxial semiconductor material on a mica sheet

The present invention is related to a preferably oriented nanotwinned Au film, a method of preparing the same, and a bonding structure comprising the same. The nanotwinned Au film has a thickness direction. The nanotwinned Au film is stacked along a [220] crystallographic axis orientation in the thickness direction. At least 50% by volume of the nanotwinned Au film is composed of a plurality of nanotwinned Au grains which are adjacent to each other, arranged in a direction perpendicular to the thickness direction, and stacked along a [111] crystallographic axis orientation.

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Chiayi, Taiwan

Yi-Chia Chou