Taiwan Semiconductor Manufacturing Comp. Ltd.

Yi-Chi Liao

Keng-Chu Lin

Yung-Cheng Lu

Chung-Chi Ko

Hung-Wen Su

Hung-Chun Tsai

A method for forming an interconnect structure. A substrate is provided with a low-k dielectric layer thereon. At least one conductive feature is then formed in the low-k dielectric layer. A cap layer is formed overlying the low-k dielectric layer, and the conductive feature and the low-k dielectric layer is then subjected to an energy source to reduce a dielectric constant thereof.

Methods for forming interconnect structures

A method of fabricating a semiconductor device. A semiconductor substrate with a patterned conductive layer on a top surface of the substrate is first provided. A dielectric layer is then formed to cover the substrate. Thereafter, an electron beam irradiation procedure is performed to anneal the patterned conductive layer and reduce resistance of the patterned conductive layer.

Growing community of inventors

Puli, Taiwan

Yi-Chi Liao