Taiwan Semiconductor Manufacturing Comp. Ltd.

Yi-Chi Huang

Jih-Churng Twu

Feng-Yu Chen

Shu-Han Chao

Jian-Lun Lo

Yuan-Hsiao Su

Yueh-Ting Yang

Chien-Hao Chen

Ching-Lun Lai

Ming-Feng Hsieh

Yuan-Chun Sie

Po-Yi Tseng

David Sung

A method of manufacturing a semiconductor structure includes depositing a silicon layer over a substrate, removing a portion of the silicon layer to form a gate stack, and performing a hydrogen treatment on the gate stack to repair a plurality of voids in the stack structure.

Semiconductor device and fabrication method therefor

A method for processing semiconductor wafers in a furnace is provided. The method includes forming a thin film on each of the semiconductor wafers in a furnace. The furnace includes a first end thermal zone, a middle thermal zone and a second end thermal zone arranged in sequence. The method further includes controlling the temperature of the furnace in a first thermal mode during the formation of the thin film. The method also includes supplying a purging gas into the furnace after the formation of the thin film. In addition, the method includes controlling the temperature of the furnace in a second thermal mode during the supply of the purging gas. The temperature distributions of the furnace are different in the first and second thermal modes.

Method for controlling temperature of furnace in semiconductor fabrication process

A method for processing semiconductor wafers in a furnace is provided. The method includes forming a thin film on each of the semiconductor wafers. The method further includes controlling the temperature of the furnace in a first thermal mode during the formation of the thin film. In the first thermal mode, a first end thermal zone, a middle thermal zone and a second end thermal zone of the furnace which are arranged in sequence have a gradually increasing temperature. The method also includes controlling the temperature of the furnace in a second thermal mode after the formation of the thin film. In the second thermal mode, the first end thermal zone, the middle thermal zone and the second end thermal zone of the furnace have a gradually decreasing temperature.

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Taichung, Taiwan

Yi-Chi Huang