United Microelectronics Corp.

Industrial Technology Research Institute

National Applied Research Laboratories

Yi-Cheng Liu

Bang-Chiang Lan

Cheng-Tung Huang

Kuan-Yang Liao

Chen-Hua Tsai

Wei-Tsun Shiau

Cheng-Tzung Tsai

Yu-Hsin Lin

Jiunn-Ren Hwang

Tai-Shan Liao

Tzu-Yun Chang

Yuan-Chin Lee

Hung-Chih Chiang

Chun-Jen Weng

De-Yi Chiou

Guo-Hao Lu

Wen-Chi Chen

The present invention provides a reflective condensing interferometer for focusing on a preset focus. The reflective condensing interferometer includes a concave mirror set, a convex mirror, a light splitting element, and a reflecting element. The concave mirror set has first and second concave surface portions which are oppositely located on two sides of a central axis passing through the preset focus and are concave on a surface facing the central axis and the preset focus. Light is preset to be incident in parallel to the central axis in use. The convex mirror is disposed between the concave mirror set and the preset focus on the central axis, and is convex away from the preset focus. The light splitting element vertically intersects with the central axis between the convex mirror and the preset focus. The reflecting element is disposed between the light splitting element and the convex mirror.

Reflective condensing interferometer

An optical system adapted to detect an object including a beam splitting and combing element, a catheter, a focusing element, a deformation detecting module, and an object detecting module is provided. The catheter sleeves outside an optical fiber, and the optical fiber has at least one fiber Bragg gratings. The deformation detecting module and the object detecting module are coupled to the beam splitting and combing element. A first light is reflected by the at least one fiber Bragg gratings and then transmitted to the deformation detecting module. A second light is transmitted to and reflected by the object, so as to be transmitted to the object detecting module. A first wavelength range of the first light is different from a second wavelength range of the second light.

Optical system

A method of fabrication of a metal oxide semiconductor field effect transistor is disclosed. At first, a substrate on which a gate structure is formed is provided. Afterward, a portion of the substrate is removed to form a first recess in the substrate at both ends of the gate structure. Additionally, a source/drain extension layer is deposited in the first recess and a plurality of spacers are formed at both ends of the gate structure. Subsequently, a portion of the source/drain extension and the substrate are removed to form a second recess in the source/drain extension and a portion of the substrate outside of the spacer. In addition, a source/drain layer is deposited in the second recess. Because the source/drain extension and the source/drain layer have specific materials and structures, short channel effect is improved and the efficiency of the metal oxide semiconductor field effect transistor is improved.

Metal oxide semiconductor field effect transistor with strained source/drain extension layer

A method of fabrication of a metal oxide semiconductor field effect transistor includes first providing a substrate on which a gate structure is formed. Afterwards, a portion of the substrate is removed to form a first recess in the substrate at both ends of the gate structure. Additionally, a source/drain extension layer is deposited in the first recess and a number of spacers are formed at both ends of the gate structure. Subsequently, a portion of the source/drain extension and the substrate are removed to form a second recess in the source/drain extension and a portion of the substrate outside of the spacer. In addition, a source/drain layer is deposited in the second recess. Because the source/drain extension and the source/drain layer have specific materials and structures, short channel effect is improved and the efficiency of the metal oxide semiconductor field effect transistor is improved.

Method of fabrication of metal oxide semiconductor field effect transistor

A method of manufacturing a metal-oxide-semiconductor (MOS) transistor device is disclosed. A semiconductor substrate having a main surface is prepared. A gate dielectric layer is formed on the main surface. A gate electrode is patterned on the gate dielectric layer. The gate electrode has vertical sidewalls and a top surface. A liner is formed on the vertical sidewalls of the gate electrode. A silicon nitride spacer is formed on the liner. The main surface is then ion implanted using the gate electrode and the silicon nitride spacer as an implantation mask, thereby forming a source/drain region of the MOS transistor device in the main surface. The silicon nitride spacer is removed. A silicon nitride cap layer that borders the liner is deposited. The silicon nitride cap layer has a specific stress status.

Method of manufacturing semiconductor MOS transistor device

First, a substrate having a plurality of NMOS transistor regions and PMOS transistor regions is provided. The substrate further includes a plurality of gate structures respectively positioned in the NMOS transistor regions and the PMOS transistor regions. A high-tensile thin film is then formed on the substrate and the plurality of gate structures. Subsequently, an annealing process is performed, and the high-tensile thin film is removed after the annealing process.

Method of manufacturing MOS transistors

Growing community of inventors

Hsinchu County, Taiwan

Yi-Cheng Liu