Taiwan Semiconductor Manufacturing Comp. Ltd.

Yi-Cheng Chu

Chung-Te Lin

Pin-cheng Hsu

Tzu-Hsiang Hsu

A transistor includes a gate electrode, a gate dielectric, a channel layer and a source line and bit line. The gate electrode includes a first gate material layer and a second gate material layer disposed on the first gate material layer, wherein a work function of the first gate material layer is lower than a work function of the second gate material layer. The gate dielectric is disposed on the gate electrode. The channel layer is disposed on the gate dielectric. The source line and bit line are disposed on and connected to the channel layer.

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Chiayi, Taiwan

Yi-Cheng Chu