Taiwan Semiconductor Manufacturing Comp. Ltd.

Primax Electronics Ltd.

Inventec Corp.

Inventec (pudong) Technology Corporation

Fourier Information Corp.

Yi-Chen Wang

Te-Chih Hsiung

Yuan-Tien Tu

Jyun-De Wu

Yi-Chun Chang

Huan-Just Lin

Chung-Yuan Chen

Bo-An Chen

Lei-Lung Tsai

Chin-Sung Pan

Peng Wang

Wei-Ping Chan

Ming-Han Wu

Che-Wei Yang

Yung-Long Chen

Wei-Yung Huang

Hsien-Tsan Chang

Wen Chang Wang

Chen-Hsuan Hsu

Chun-Feng Hsu

Yi-Chao Chang

Pang-Ping Lo

Chun-Tai Wu

Guang-Hong Cheng

Embodiments provide a dielectric inter block disposed in a metallic region of a conductive line or source/drain contact. A first and second conductive structure over the metallic region may extend into the metallic region on either side of the inter block. The inter block can prevent etchant or cleaning solution from contacting an interface between the first conductive structure and the metallic region.

Inter block for recessed contacts and methods forming same

A semiconductor device includes a channel structure, a first gate structure straddling the channel structure, and an epitaxial structure. The epitaxial structure is adjacent to the first gate structure and is coupled to an end of the channel structure. The semiconductor device further includes a first contact structure disposed over and in contact with the epitaxial structure and a nitride-based conformal layer extending at least over the first contact structure. The semiconductor device further includes an oxide-based layer disposed over the nitride-based conformal layer. A portion of the nitride-based conformal layer, disposed over the first contact structure, has a dip that is filled with a first portion of the oxide-based layer.

Dielectric cap structure in semiconductor devices and methods of manufacturing the same

A method includes removing a dummy gate stack to form a first trench between gate spacers, forming a replacement gate stack in the first trench, recessing the replacement gate stack to form a second trench between the gate spacers, selectively depositing a conductive capping layer in the second trench, forming a dielectric hard mask in the second trench and over the conductive capping layer, and etching the dielectric hard mask using an etching gas to form an opening in the dielectric hard mask. The replacement gate stack is revealed to the opening. The conductive capping layer is more resistant to the etching gas than the replacement gate stack. The method further comprises forming a gate contact plug over and contacting the conductive capping layer.

Conductive capping for work function layer and method forming same

A semiconductor device includes a gate structure, source/drain regions, source/drain contacts, a gate dielectric cap, an etch stop layer, and a gate contact. The gate structure is over a substrate. The source/drain regions are at opposite sides of the gate structure. The source/drain contacts are over the source/drain regions, respectively. The gate dielectric cap is over the gate structure and has opposite sidewalls interfacing the source/drain contacts.

Etch profile control of gate contact opening

Embodiments include a contact structure and method of forming the same where the contact structure is deliberately positioned near the end of a metallic line. An opening is formed in an insulating structure positioned over the metallic line and then the opening is extended into the metallic line by an etching process. In the etching process, the line end forces etchant to concentrate back away from the line end, causing lateral etching of the extended opening. A subsequent contact is formed in the opening and enlarged opening.

Recessed contacts at line end and methods forming same

A method includes forming a conductive feature through a first dielectric layer, sequentially forming a second dielectric layer and a third dielectric layer over the first dielectric layer, and etching the third dielectric layer to form an opening. A first width of the opening at a top surface of the third dielectric layer is greater than a second width of the opening at a first interface between the third dielectric layer and the second dielectric layer. The method also includes etching the second dielectric layer until the opening extends to the conductive feature, thereby forming an enlarged opening, and forming a metal material in the enlarged opening. A third width of the enlarged opening at the first interface is equal to or less than a fourth width of the enlarged opening at a second interface between the second dielectric layer and the first dielectric layer.

Semiconductor structure and method for forming the same

Improved conductive contacts, methods for forming the same, and semiconductor devices including the same are disclosed. In an embodiment, a semiconductor device includes a first interlayer dielectric (ILD) layer over a transistor structure; a first contact extending through the first ILD layer, the first contact being electrically coupled with a first source/drain region of the transistor structure, a top surface of the first contact being convex, and the top surface of the first contact being disposed below a top surface of the first ILD layer; a second ILD layer over the first ILD layer and the first contact; and a second contact extending through the second ILD layer, the second contact being electrically coupled with the first contact.

Contacts for semiconductor devices and methods of forming the same

A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a first fin structure. The semiconductor device structure includes a first source/drain structure over the first fin structure. The semiconductor device structure includes a first dielectric layer over the first source/drain structure and the substrate. The semiconductor device structure includes a first conductive contact structure in the first dielectric layer and over the first source/drain structure. The semiconductor device structure includes a second dielectric layer over the first dielectric layer and the first conductive contact structure. The semiconductor device structure includes a first conductive via structure passing through the second dielectric layer and connected to the first conductive contact structure. The first conductive via structure has a first substantially strip shape in a top view of the first conductive via structure.

Semiconductor device structure with conductive via structure and method for forming the same

A method comprises forming a source/drain contact over a source/drain region; forming an etch stop layer over the source/drain contact and an interlayer dielectric (ILD) layer over the etch stop layer; performing a first etching process to form a via opening extending through the ILD layer and a recess in the etch stop layer; oxidizing a sidewall of the recess in the etch stop layer; after oxidizing the sidewall of the recess in the etch stop layer, performing a second etching process to extend the via opening down to the source/drain contact; and after performing the second etching process, forming a source/drain via in the via opening.

Etch profile control of via opening

A method comprises forming a gate structure over a semiconductor substrate; forming an etch stop layer over the gate structure and an ILD layer over the etch stop layer; performing a first etching process to form a gate contact opening extending through the ILD layer into the etch stop layer, resulting in a sidewall of the etch stop layer being exposed in the gate contact opening; oxidizing the exposed sidewall of the etch stop layer; after oxidizing the exposed sidewall of the etch stop layer, performing a second etching process to deepen the gate contact opening; and forming a gate contact in the deepened gate contact opening.

A sound isolation window includes a frame and a plurality of sound blocking bars. The frame has an upper frame portion and a lower frame portion. The frame further has a first sidewall and a second sidewall connected to the upper and lower frame portion. The upper frame portion, the lower frame portion, the first sidewall and the second sidewall form a first opening and an opposite second opening. Each sound blocking bar includes a plane perpendicular to the upper frame portion and the lower frame. The sound blocking bars are arranged along the first direction from the first opening to the second opening and spaced apart from each other. Projections along the first direction of the sound blocking bars over the first opening cover the first opening. The width of each sound blocking bar is less than one-half of the width of the first opening.

Sound isolation window and heat dissipation structure

A keyboard device includes a membrane circuit board, a base plate and a key. The key includes a keycap, a connecting element and a stabilizer bar. The connecting element is connected between the keycap and the base plate. The stabilizer bar is connected between the keycap and the connecting element. While the keycap is moved upwardly or downwardly relative to the base plate, the stabilizer bar is swung to stabilize the key. Since the stabilizer bar is connected between the keycap and the connecting element, the stabilizer bar does not readily collide with or knock on the base plate. During the process of operating the key, the generated noise is reduced. Consequently, the operating comfort to the user is enhanced.

Keyboard device

A gas-supply system includes a gas container filled with gas, a gas flow controller coupled to the gas container via a first tube, and an operation device electrically connected to the gas flow controller. The gas-supply system further includes a pressure transducer installed on a second tube connected to the gas flow controller and configured to generate a pressure signal to the operation device according to the pressure of the gas in the second tube. The operation device is configured to generate a control signal to the gas flow controller according the pressure signal, and the gas flow controller is configured to adjust the flow rate of the gas in the second tube according to the control signal.

Gas-supply system and method

The present invention provides an illuminated keyboard, including a light guide backplate and a plurality of keys connected to the light guide backplate. The light guide backplate of the present application is made of a light guide material and configured to transmit and project light rays to the keys. A printed circuit layer is formed on the light guide backplate and includes a plurality of conductive switch contacts. Each key includes a key cap, a connection member, and a support member, and the support member has a conductive contact. When the key cap is pressed, the conductive contact of the support member moves downward to trigger a conductive switch contact of the printed circuit layer to generate a switch signal. In the present application, a light guide backplate provides functions, such as guiding light, a function of printed circuit layer, and connecting a key, so as to reduce thickness of the illuminated keyboard.

Growing community of inventors

Taipei, Taiwan

Yi-Chen Wang