Taiwan Semiconductor Manufacturing Comp. Ltd.

Qisda Corporation

Yi-Chen Ho

Ju Ru Hsieh

Chien Lin

You-Hua Chou

Zhen-Cheng Wu

Che-Lun Chang

Ching-Lun Lai

Hung Chih Hu

Tzu-Wei Lin

Yen-Hao Liao

Cheng-Yeh Yu

Hsin-Hsing Chen

Ming-Kai Lo

Hung Cheng Yu

Po-Fu Wu

Hsing-Yuan Huang

Cheng-Yu Hung

A semiconductor device including fin field-effect transistors, includes a first gate structure extending in a first direction, a second gate structure extending the first direction and aligned with the first gate structure in the first direction, a third gate structure extending in the first direction and arranged in parallel with the first gate structure in a second direction crossing the first direction, a fourth gate structure extending the first direction, aligned with the third gate structure and arranged in parallel with the second gate structure, an interlayer dielectric layer disposed between the first to fourth gate electrodes, and a separation wall made of different material than the interlayer dielectric layer and disposed between the first and third gate structures and the second and fourth gate structures.

Semiconductor device and manufacturing method thereof

An integrated circuit die includes a FinFET transistor. The FinFET transistor includes an anti-punch through region below a channel region. Undesirable dopants are removed from the anti-punch through region during formation of the source and drain regions. When source and drain recesses are formed, a layer of dielectric material is deposited in the recesses. An annealing process is then performed. Undesirable dopants diffuse from the anti-punch through region into the layer of dielectric material during the annealing process. The layer of dielectric material is then removed. The source and drain regions are then formed by depositing semiconductor material in the recesses.

Integrated circuit with anti-punch through control

A structure includes a first dielectric film and a second dielectric film. The second dielectric film is formed on and in contact with the first dielectric film, in which a first pore is formed between the first dielectric film and the second dielectric film, and a thickness of the first dielectric film is smaller than a diameter of the first pore.

Dielectric layer, interconnection structure using the same, and manufacturing method thereof

The present disclosure provides a structure and a method to reduce electro-migration. An interconnect structure according to the present disclosure includes a conductive feature embedded in a dielectric layer, a capping barrier layer disposed over the conductive feature and the dielectric layer, and an adhesion layer sandwiched between the capping barrier layer and the dielectric layer. The adhesion layer includes a degree of crystallinity between about 40% and about 70%.

Electro-migration reduction

A semiconductor device includes a semiconductor substrate, a capacitor, and an interconnection layer. The capacitor is over the semiconductor substrate and includes a bottom electrode, a top electrode, and an insulator layer. The top electrode has a top surface and a bottom surface rougher than the top surface of the top electrode. The insulator layer is between the bottom electrode and the top electrode. The interconnection layer is over the semiconductor substrate and is electrically connected to the capacitor.

A method for manufacturing a dielectric layer includes forming a first dielectric film over a substrate. A first porogen is deposited over the first dielectric film. A second dielectric film is formed on and in contact with the first dielectric film and the first porogen. The first porogen is removed.

An object displacement detection method includes capturing n images of an object for obtaining n sets of image dots, where the object corresponds to an iset of image dots in an iimage of the n images; performing (n&#x2212;1) difference calculations using the n sets of image dots to obtain (n&#x2212;1) sets of difference image dots, where a jset of difference image dots of the (n&#x2212;1) sets of difference image dots is generated by performing a jdifference calculation of the (n&#x2212;1) difference calculations using a (j+1)set of image dots and a jset of image dots of the n sets of the image dots; and determining the object has displaced when a sum of numbers of the (n&#x2212;1) sets of difference image dots reaches a first threshold.

Growing community of inventors

Hsinchu, Taiwan

Yi-Chen Ho