Au Optronics Corporation

Yi-Chen Chung

Chia-Yu Chen

Hung-Che Ting

Fan-Wei Chang

Hsueh-Hsing Lu

Yu-Hung Chen

Hui-Ling Ku

Chi-Wei Chou

The array substrate includes a substrate, a thin film transistor (TFT) and a pixel electrode. The TFT is disposed on the substrate and includes a gate electrode, a gate insulating layer, a patterned semiconductor layer, a patterned etching stop layer, a patterned hard mask layer, a source electrode and a drain electrode. The patterned gate insulating layer is disposed on the gate electrode. The patterned semiconductor layer is disposed on the patterned gate insulating layer. The patterned etching stop layer is disposed on the patterned semiconductor layer. The source and the drain electrodes are disposed on the patterned etching stop layer and the patterned semiconductor layer. The patterned hard mask layer is disposed between the source electrode and the patterned etching stop layer and disposed between the drain electrode and the patterned etching stop layer. The pixel electrode is disposed on the substrate and electrically connected to the TFT.

Array substrate

A manufacturing method of an array substrate includes following steps. A first photolithography process is performed to form a gate electrode on a substrate. A gate insulating layer is formed to cover the substrate and the gate electrode. A second photolithography process is performed to form a patterned semiconductor layer and a patterned etching stop layer. A semiconductor layer and an etching stop layer are successively formed on the gate insulating layer, and a second patterned photoresist is formed on the etching stop layer. The etching stop layer uncovered by the second patterned photoresist is removed. The semiconductor layer uncovered by the second patterned photoresist is removed for forming the patterned semiconductor on the gate insulating layer. A patterned etching stop layer is formed on the patterned semiconductor layer by etching the second patterned photoresist and the etching stop layer.

Manufacturing method of array substrate

A manufacturing method of an array substrate includes the following steps. A gate electrode and a gate insulator layer are successively formed on a substrate. A semiconductor layer, an etching stop layer, a hard mask layer, and a second patterned photoresist are successively formed on the gate insulator layer. The second patterned photoresist is employed for performing an over etching process to the hard mask layer to form a patterned hard mask layer. The second patterned photoresist is employed for performing a first etching process to the etching stop layer. The second patterned photoresist is then employed for performing a second etching process to the semiconductor layer to form a patterned semiconductor layer. The etching stop layer uncovered by the patterned hard mask layer is then removed for forming a patterned etching stop layer.

Array substrate and manufacturing method thereof

A manufacturing method of an array substrate includes the following steps. A first conductive layer, a gate insulating layer, a semiconductor layer, an etching stop layer, and a first patterned photoresist are successively formed on a substrate. The etching stop layer and the semiconductor layer uncovered by the first patterned photoresist are then removed by a first etching process. A patterned gate insulating layer and a patterned etching stop layer are then formed through a second etching process. The first conductive layer uncovered by the patterned gate insulating layer is then removed to form a gate electrode. The semiconductor layer uncovered by the patterned etching stop layer is then removed to form a patterned semiconductor layer and partially expose the patterned gate insulating layer.

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Hsin-Chu, Taiwan

Yi-Chen Chung