Siliconware Precision Industries Co., Ltd.

Yi-Che Lai

Chun-Tang Lin

Shih-Kuang Chiu

Mu-Hsuan Chan

Wen-Tsung Tseng

Yi-Chian Liao

Mao-Hua Yeh

Wan-Ting Chen

Chien-Feng Chan

Hung-Hsien Chang

Fang-Yu Liang

Hong-Da Chang

Meng-Tsung Lee

Hung-Wen Liu

Kuan-Wei Chuang

Yi-Wei Liu

Chen-Yu Huang

Pin-Cheng Huang

Chang-Fu Lin

Yan-Heng Chen

Chi-Hsin Chiu

Hsi-Chang Hsu

Shih-Ching Chen

Provided is a substrate structure, including: a substrate body having a conductive contact; an insulating layer formed on the substrate body with the conductive contact exposed therefrom; and an insulating protection layer formed on a portion of a surface of the insulating layer, and having a plurality of openings corresponding to the conductive contact, wherein at least one of the openings is disposed at an outer periphery of the conductive contact. Accordingly, the insulating protection layer uses the openings to dissipate and disperse residual stresses in a manufacturing process of high operating temperatures.

Substrate structure

A packaging substrate is provided, which includes: a substrate body having a first region with a plurality of conductive pads and a second region adjacent to the first region, and a material layer formed on the second region to prevent the substrate body from warping. An electronic package having the packaging substrate is also provided.

Packaging substrate and electronic package having the same

A substrate structure is provided, including a substrate body having a conductive pad, an insulation layer formed on the substrate body and exposing the conductive pad, a conductive pillar disposed on the conductive pad, and a metal pad disposed on the insulation layer and electrically connected to the conductive pillar. A conductive component can be coupled to the metal pad. During a high-temperature process, the conductive pillar and the metal pad disperse the remaining stress generated due to heat, thereby preventing the conductive component from being cracked.

A semiconductor package is provided, including a semiconductor substrate having a plurality of conductive vias, a buffer layer formed on the semiconductor substrate, a plurality of conductive pads formed on end surfaces of the conductive vias and covering the buffer layer. During a reflow process, the buffer layer greatly reduces the thermal stress, thereby eliminating the occurrence of cracking at the interface of conductive pads. A method of fabricating such a semiconductor package is also provided.

Semiconductor package and method of fabricating the same

A semiconductor device is provided, including: a substrate having opposing first and second surfaces and a plurality of conductive vias passing through the first and second surfaces; an insulating layer formed on the first surface of the substrate and exposing end portions of the conductive vias therefrom; and a buffer layer formed on the insulating layer at peripheries of the end portions of the conductive vias, thereby increasing product reliability and good yield.

Semiconductor device having conductive vias

A semiconductor package is provided, which includes: a carrier; at least an interposer disposed on the carrier; an encapsulant formed on the carrier for encapsulating the interposer while exposing a top surface of the interposer; a redistribution layer formed on the encapsulant and the top surface of the interposer; and at least a semiconductor element disposed on the redistribution layer. The top surface of the interposer is flush with a surface of the encapsulant so as for the redistribution layer to have a planar surface for disposing the semiconductor element, thereby preventing warpage of the interposer and improving the reliability of electrical connection between the redistribution layer and the semiconductor element.

Semiconductor package and fabrication method thereof

A method of testing a semiconductor structure is provided, including providing at least a semiconductor structure having an interposer and a semiconductor element disposed on the interposer; disposing the semiconductor structure on a carrier having a supporting portion, with the interposer being supported by the supporting portion; and performing a test process. The semiconductor structure has been tested for its electrical performance prior to packaging, thereby eliminating the necessity for a conductive pathway to pass through an inner circuit of an package substrate. Therefore, the testing process is accelerated and the time is save.

Method of fabricating a semiconductor package

The present invention provides a package structure and fabrication method thereof. The method includes providing a first carrier having a metal layer; forming a dielectric layer on the metal layer; forming a plurality of conductive pillars embedded into the dielectric layer and protruding from a surface of the dielectric layer, and disposing an electronic component on the surface of the dielectric layer; forming an encapsulating layer on the dielectric layer to encompass the plurality of conductive pillars, the dielectric layer and the electronic component; removing a portion of the encapsulating layer and the first carrier such that two ends of each of the plurality of conductive pillars are exposed from the encapsulating layer and the dielectric layer. Therefore, the present invention effectively reduces manufacturing costs and the need for an opening process while manufacturing the conductive pillars can be eliminated.

Package structure and fabrication method thereof

A fabrication method of a semiconductor package is disclosed, which includes the steps of: disposing a plurality of first semiconductor elements on an interposer; forming a first encapsulant on the interposer for encapsulating the first semiconductor elements; disposing a plurality of second semiconductor elements on the first semiconductor elements; forming a second encapsulant on the first semiconductor elements and the first encapsulant for encapsulating the second semiconductor elements; and thinning the interposer, thereby reducing the overall stack thickness and preventing warpage of the interposer.

Fabrication method of semiconductor package

A method for fabricating a package structure is provided, which includes: providing a first carrier having a circuit layer thereon; forming a plurality of conductive posts on the circuit layer and disposing at least an electronic element on the first carrier; forming an encapsulant on the first carrier to encapsulate the conductive posts, the circuit layer and the electronic element; and removing the first carrier, thereby dispensing with the conventional hole opening process for forming the conductive posts and hence reducing the fabrication costs.

A semiconductor package is provided, including a semiconductor substrate having a plurality of conductive vias, a buffer layer formed on the semiconductor substrate, a plurality of conductive pads formed on end surfaces of the conductive vias and covering the buffer layer. During a reflow process, the buffer layer greatly reduces the thermal stress, thereby eliminating the occurance of cracking at the interface of conductive pads. A method of fabricating such a semiconductor package is also provided.

A method of fabricating a semiconductor package is provided, including: cutting a substrate into a plurality of interposers; disposing the interposers in a plurality of openings of a carrier, wherein the openings are spaced from one another by a distance; forming a first encapsulant to encapsulate the interposers; removing the carrier; and disposing at least a semiconductor element on each of the interposers. By cutting the substrate first, good interposers can be selected and rearranged such that finished packages can be prevented from being wasted due to inferior interposers.

Method of fabricating semiconductor package having an interposer structure

A fabrication method of a semiconductor package is disclosed, which includes the steps of: providing a semiconductor structure having a carrier, a circuit portion formed on the carrier and a plurality of semiconductor elements disposed on the circuit portion; disposing a lamination member on the semiconductor elements; forming an insulating layer on the circuit portion for encapsulating the semiconductor elements; and removing the carrier. The lamination member increases the strength between adjacent semiconductor elements so as to overcome the conventional cracking problem caused by a CTE mismatch between the semiconductor elements and the insulating layer when the carrier is removed.

A semiconductor package is provided, including: a carrier; at least an interposer disposed on the carrier; an encapsulant formed on the carrier for encapsulating the interposer while exposing a top side of the interposer; a semiconductor element disposed on the top side of the interposer; and an adhesive formed between the interposer and the semiconductor element. By encapsulating the interposer with the encapsulant, warpage of the interposer is avoided and a planar surface is provided for the semiconductor element to be disposed thereon, thereby improving the reliability of electrical connection between the interposer and the semiconductor element.

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Taichung, Taiwan

Yi-Che Lai