Taiwan Semiconductor Manufacturing Comp. Ltd.

Yi-Chao Mao

Chin-Chuan Chang

Szu-Wei Lu

Jing-Cheng Lin

Jui-Pin Hung

Nai-Wei Liu

Hung-Chih Chen

Chun-Hsing Su

Kun-Tong Tsai

Chen-Hua Douglas Yu

Shin-Puu Jeng

Chin-Fu Kao

Tsei-Chung Fu

Wan-Ting Shih

Tsan-Hua Tung

Wen-Hua Chang

Chih-Hao Chen

Tsung-Fu Tsai

Szu Wei Lu

Hsien-Wen Liu

Chung Yu Wang

Kung-Chen Yeh

Long Hua Lee

Yi-Lin Tsai

Shih-Yi Syu

Jeffrey Chang

Ying-Tz Hung

Embodiments provide a precutting technique to cut parallel openings at a front surface of a device wafer, then flipping the device wafer over and completing the cut from the back side of the device wafer to singulate a die from the wafer. The precutting technique and back side cutting technique combined provides an indentation in the side surface(s) of the device.

Method of singulating a semiconductor device

An integrated circuit structure is provided. The integrated circuit structure includes a die that contains a substrate, an interconnection structure, active connectors and dummy connectors. The interconnection structure is disposed over the substrate. The active connectors and the dummy connectors are disposed over the interconnection structure. The active connectors are electrically connected to the interconnection structure, and the dummy connectors are electrically insulated from the interconnection structure.

Integrated circuit structure, and method for forming thereof

A package structure is provided. The package structure includes a lower semiconductor die and a first protective layer surrounding the lower semiconductor die. The package structure also includes a dielectric layer partially covering the first protective layer and the lower semiconductor die and an upper semiconductor die over the lower semiconductor die and the first protective layer. The upper semiconductor die is bonded with the lower semiconductor die through a connector. The package structure further includes an insulating film surrounding the connector and a second protective layer surrounding the upper semiconductor die. A portion of the second protective layer is between the insulating film and the dielectric layer.

Package structure with stacked semiconductor dies

An apparatus for detecting an endpoint of a grinding process includes a connecting device, a timer and a controller. The connecting device is connected to a sensor that periodically senses an interface of a reconstructed wafer comprising a plurality of dies of at least two types to generate a thickness signal comprising thicknesses from a surface of an insulating layer of the reconstructed wafer to the interface of the reconstructed wafer. The timer is configured to generate a clock signal having a plurality of pulses with a time interval. The controller is coupled to the sensor and the timer, and configured to filter the thickness signal according to the clock signal to output a thickness extremum among the thicknesses in the thickness signal within each time interval, wherein the thickness signal after the filtering is used to determine the endpoint of the grinding process being performed on the reconstructed wafer.

Apparatus for detecting end point

A system for thinning a substrate includes a chuck and a first liquid supply unit. The chuck includes a base portion and a frame portion disposed on the base portion, where the substrate is configured to be placed on a carrying surface of the chuck. The first liquid supply unit extends along sidewalls the frame portion and the base portion, an outlet of the first liquid supply unit is disposed next to the carrying surface of the chuck, the first liquid supply unit delivers a first liquid from a bottom of the chuck to the outlet, and the first liquid discharges from the outlet to cover a sidewall of the substrate.

System for thinning substrate

A structure and a formation method of a package structure are provided. The method includes disposing a first semiconductor die over a carrier substrate and forming a first protective layer to surround the first semiconductor die. The method also includes forming a dielectric layer over the first protective layer and the first semiconductor die. The method further includes patterning the dielectric layer to form an opening partially exposing the first semiconductor die and the first protective layer. In addition, the method includes bonding a second semiconductor die to the first semiconductor die after the opening is formed. The method includes forming a second protective layer to surround the second semiconductor die.

Structure and formation method of package structure with stacked semiconductor dies

A method of packaging a semiconductor device, comprising: attaching a plurality of dies to a carrier wafer, wherein each of the dies includes a top surface; forming a molding compound layer over the dies, wherein the top surface of the dies are covered by the molding compound layer; removing a first portion of the molding compound layer; removing a second portion of the molding compound layer such that the top surface of the dies is not covered by the molding compound layer; forming a redistribution layer (RDL) over the top surface of the dies; forming a plurality of solder balls over at least a portion of the RDL; and singulating the dies.

Methods and structures for packaging semiconductor dies

A method for thinning a substrate is provided. The method includes at least the following steps. A substrate is disposed on a carrying surface of a chuck, where a first liquid supply unit surrounds the chuck to form a frame of the chuck, and an outlet of the first liquid supply unit is disposed aside the carrying surface of the chuck. A first liquid flows from a bottom of the frame to the outlet and discharges to fill a gap between the substrate and the carrying surface of the chuck. The substrate is thinned during the gap is filled.

Method for substrate thinning

Apparatus and method for detecting end point

A method and a system for thinning a substrate are provided. The method includes at least the following steps. A liquid seal is provided at an interface between a chuck and a substrate disposed on the chuck. The substrate is thinned during the liquid seal is provided.

Method and system for substrate thinning

A grinding element mounted on a grinding wheel and a grinding wheel containing the same are provided for grinding. The grinding element includes a grinding tooth, and the grinding tooth includes a grinding material having a framework structure and pores distributed in the framework structure. The framework structure includes a bond material and abrasive particles that are bonded by the bond material. A pore size of the pores is larger than 40 microns but smaller than 70 microns. A manufacturing method for semiconductor packages using the same is also provided.

Grinding element, grinding wheel and manufacturing method of semiconductor package using the same

A method for performing grinding includes selecting a target wheel loading for wafer grinding processes, and performing a grinding process on a wafer. With the proceeding of the grinding process, wheel loadings of the grinding process are measured. The grinding process is stopped after the target wheel loading is reached. The method alternatively includes selecting a target reflectivity of wafer grinding processes, and performing a grinding process on a wafer. With a proceeding of the grinding process, reflectivities of a light reflected from a surface of the wafer are measured. The grinding process is stopped after one of the reflectivities reaches the target reflectivity.

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Zhongli, Taiwan

Yi-Chao Mao