Taiwan Semiconductor Manufacturing Comp. Ltd.

Yi-Bo Liao

Cheng-Ting Chung

Kuan-Lun Cheng

Yu-Xuan Huang

Ching-Wei Tsai

Hou-Yu Chen

Chih-Hao Wang

Wei Ju Lee

Chun-Fu Cheng

Huan-Chieh Su

Chun-Yuan Chen

Kuan-Ting Pan

Yi-Hsun Chiu

Pei-Yu Wang

Yi-Ruei Jhan

Jin Cai

Hou-yu Chen

Szuya Liao

Sai-Hooi Yeong

Kuo-Cheng Chiang

Jiann-Tyng Tzeng

Wei-Cheng Lin

Lin-Yu Huang

Kai-Chieh Yang

Wei-An Lai

Wei-Yen Woon

Jhih-Rong Huang

Ming Chian Tsai

Cheng-Chi Chuang

Mrunal Abhijith Khaderbad

Shuen-Shin Liang

Kuan-lun Cheng

Wang-Chun Huang

Kuo-cheng Chiang

Meng-Yu Lin

Yen-Tien Tung

Wei-De Ho

Kuan-Kan Hu

Meng-Huan Jao

Cheng-Yin Wang

Sung-li Wang

Chun-fu Cheng

Min-Chiang Chuang

A semiconductor device structure, along with methods of forming such, are described. The structure includes a source/drain region and a first conductive feature disposed below the source/drain region. The first conductive feature is electrically connected to the source/drain region. The structure further includes a second conductive feature disposed over the source/drain region, and the second conductive feature is electrically connected to the source/drain region. The structure further includes a third conductive feature disposed on and in contact with a first portion of the second conductive feature and a dielectric layer disposed on and in contact with a second portion of the second conductive feature.

Semiconductor device structure and methods of forming the same

In an embodiment, a device includes: a dielectric wall; nanostructures abutting the dielectric wall; a lower source/drain region adjoining a lower subset of the nanostructures; an upper source/drain region adjoining an upper subset of the nanostructures, the upper source/drain region oppositely doped from the lower source/drain region; and a shared source/drain contact contacting the upper source/drain region and the lower source/drain region, the shared source/drain contact extending into the dielectric wall.

Dielectric walls for complementary field effect transistors

A device includes: a first stack of first semiconductor nanostructures; a second stack of second semiconductor nanostructures on the first stack of semiconductor nanostructures; a third stack of first semiconductor nanostructures adjacent the first stack; a first gate structure wrapping around the first stack and the second stack; a second gate structure wrapping around the third stack; a gate isolation structure between the first gate structure and the second gate structure; a dielectric layer on the second gate structure and laterally abutting the gate isolation structure; and a via. The via includes: a first portion that extends in a first direction, the first portion being on the first gate structure, the gate isolation structure and the dielectric layer; and a second portion that extends in a second direction transverse the first direction.

Device with gate-to-drain via and related methods

A device includes a substrate, a gate structure, a capping layer, a source/drain region, a source/drain contact, and an air spacer. The gate structure wraps around at least one vertical stack of nanostructure channels over the substrate. The capping layer is on the gate structure. The source/drain region abuts the gate structure. The source/drain contact is on the source/drain region. The air spacer is between the capping layer and the source/drain contact.

Field effect transistor with air spacer and method

A semiconductor device includes a semiconductor substrate, a first semiconductor stack, a second semiconductor stack, a first gate structure, and a second gate structure. The semiconductor substrate comprising a first device region and a second device region. The first semiconductor stack is located on the semiconductor substrate over the first device region, and has first channels. The second semiconductor stack is located on the semiconductor substrate over the second device region, and has second channels. A total number of the first channels is greater than a total number of the second channels. The first gate structure encloses the first semiconductor stack. The second gate structure encloses the second semiconductor stack.

Semiconductor device and method of manufacturing the same

A method for manufacturing a semiconductor device is provided. The method includes forming a first transistor over a substrate, wherein the first transistor comprises a first source/drain feature; depositing an interlayer dielectric layer around the first transistor; etching an opening in the interlayer dielectric layer to expose the first source/drain feature; conformably depositing a semimetal layer over the interlayer dielectric layer, wherein the semimetal layer has a first portion in the opening in the interlayer dielectric layer and a second portion over a top surface of the interlayer dielectric layer; and forming a source/drain contact in the opening in the interlayer dielectric layer.

Semiconductor device and manufacturing method thereof

A semiconductor device is provided. The semiconductor device has a stack of parallel metal gates formed on a first side of a substrate, a first pair of insulation regions extending across the stack of parallel metal gates, a second pair of insulation regions replacing two of the parallel metal gates, a first isolated region enclosed by the first and second pairs of insulation layers, a first via formed within the isolated region, and an insulation layer replacing the metal gates located within the isolated region. Tree or more metal gates are located within the isolated region, and the first via extends through a portion of a center one of the three metal gates within the isolated region.

A device includes a substrate. A channel region of a transistor overlies the substrate and a source/drain region is in contact with the channel region. The source/drain region is adjacent to the channel region along a first direction. A source/drain contact is disposed on the source/drain region. A gate electrode is disposed on the channel region and a gate contact is disposed on the gate electrode. A first low-k dielectric layer is disposed between the gate contact and the source/drain contact along the first direction.

Semiconductor device having a gate contact on a low-k liner

A semiconductor device includes a fin, first source/drain regions, second source/drain regions, a first nanosheet, a second nanosheet and a metal gate structure. The fin extends in a first direction and protrudes above an insulator. The first source/drain regions are over the fin. The second source/drain regions are over the first source/drain regions. The first nanosheet extends in the first direction between the first source/drain regions. The second nanosheet extends in the first direction between the second source/drain regions. The metal gate structure is over the fin and between the first source/drain regions. The metal gate structure extends in a second direction different from the first direction from a first sidewall to a second sidewall. A first distance in the second direction between the first nanosheet and the first sidewall is smaller than a second distance in the second direction between the first nanosheet and the second sidewall.

Semiconductor device and method of manufacture

A semiconductor device structure is provided. The semiconductor device structure includes a fin structure formed over a substrate, and the fin structure includes a plurality of nanostructures stacked in a vertical direction. The semiconductor device structure includes a gate structure formed over the fin structure, and an S/D structure formed adjacent to the gate structure. The semiconductor device structure includes a first via formed adjacent to the S/D structure, and a first contact structure formed over the S/D structure. The semiconductor device structure includes a second contact structure formed below the S/D structure, and the first via is in direct contact with the first contact structure and the second contact structure.

Semiconductor device structure with backside contact

A semiconductor structure includes a first transistor having a first source/drain (S/D) feature and a first gate; a second transistor having a second S/D feature and a second gate; a multi-layer interconnection disposed over the first and the second transistors; a signal interconnection under the first and the second transistors; and a power rail under the signal interconnection and electrically isolated from the signal interconnection, wherein the signal interconnection electrically connects one of the first S/D feature and the first gate to one of the second S/D feature and the second gate.

Backside signal interconnection

The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a first vertical structure and a second vertical structure formed over the substrate, and a conductive rail structure between the first and second vertical structures. A top surface of the conductive rail structure can be substantially coplanar with top surfaces of the first and the second vertical structures.

Conductive rail structure for semiconductor devices

In an embodiment, a device includes: a first interconnect structure including metallization patterns; a second interconnect structure including a power rail; a device layer between the first interconnect structure and the second interconnect structure, the device layer including a first transistor, the first transistor including an epitaxial source/drain region; and a conductive via extending through the device layer, the conductive via connecting the power rail to the metallization patterns, the conductive via contacting the epitaxial source/drain region.

Semiconductor devices

A semiconductor structure includes a semiconductor substrate, a first source/drain portion, a second source/drain portion, a first metal contact, a second metal contact and a first conductive carbon layer. The first and second source/drain portions are formed over the semiconductor substrate, and are spaced apart from each other. The first source/drain portion has a conductivity type different from that of the second source/drain portion. The first and second metal contacts are respectively formed on the first and second source/drain portions. The first conductive carbon layer is formed between the first source/drain portion and the first metal contact.

Semiconductor structure with conductive carbon layer and method for manufacturing the same

A method includes forming a first transistor and a second transistor over a semiconductor substrate, wherein the first transistor and the second transistor are vertically stacked. The method further includes exposing a backside of a first gate stack of the first transistor; forming a backside gate etch stop layer (ESL) on the backside of the first gate stack; patterning a contact opening through the backside gate ESL to expose the first gate stack; and forming a backside gate contact in the contact opening. The backside gate contact extends through the backside gate ESL to electrically connect to the first gate stack.

Growing community of inventors

Hsinchu, Taiwan

Yi-Bo Liao