Lam Research Corporation

Applied Materials, Inc.

Lsi Logic Corporation

Yezdi N Dordi

Fritz C Redeker

John Boyd

William Thie

Fred Conrad Redeker

Hyungsuk Alexander Yoon

John M Boyd

Tiruchirapalli Arunagiri

Aniruddha Joi

Robin W Cheung

Bob Maraschin

Shijian Li

Joseph Stevens

Aleksander Owczarz

Arthur M Howald

Carl Woods

Michael N Sugarman

Peter W Hey

Jacob Wylie

Ashok K Sinha

Ratson Morad

Mikhail Korolik

Alan M Schoepp

John P Parks

Mark Robert Denome

Eugenijus Norkus

Robert A Maraschin

Praveen Nalla

Todd Alan Balisky

Clint Thomas

H Peter W Hey

John Martin De Larios

Donald J Olgado

Ho Seon Shin

Dries Dictus

Aldona Jagminiene

George Birkmaier

Avi Tepman

Michael Ravkin

Artur Kolics

Patrick A Van Cleemput

Dan A Marohl

Kaihan Abidi Ashtiani

Donald J K Olgado

Daniel A Carl

Larry Zhao

Joel M Cook

Joe Stevens

William T Lee

Ina Stankeviciene

Derek Wong

Dan Carl

Jane Jaciauskiene

Loreta Tamasauskaite-Tamasiunaite

Eugene Ravinovich

Kailash Venkatraman

Andrew D Bailey, Iii

Liang-Yuh Chen

Mike Ravkin

Nicolas J Bright

David J Hemker

Paul F Smith

Mark Lloyd

Zhonghui Alex Wang

Roy Edwards

Bob Lowrance

Steven James Madsen

Alex Yoon

Dmitry Lubomirsky

Michael Xiaoxuan Yang

Imran Hashim

Peijun Ding

Barry Lee Chin

Saravjeet Singh

Liang Light Chen

Nicolay Kovarsky

Benjamin W Mooring

Richard Janek

Dave Hemker

Jennifer Meng Tseng

Simon McClatchie

Algirdas Vaskelis

Sheshraj L Tulshibagwale

Muhammad Atif Malik

Sabir A Majumder

Albina Zieliene

Henan Hao

Radha Nayak

Tiruchirapalli Arunagirí

Anna Marie Lloyd, Legal Representative

Ernest Chen

Zita Sukackiene

B Michelle Chen

Timothy H Franklin

Ben Shen

Johan Vertommen

Nicolay Y Kovarsky

A method for forming a self-forming barrier in a feature of a substrate is provided, including the following operations: depositing a metallic liner in the feature of the substrate, the metallic liner being deposited over a dielectric of the substrate; depositing a zinc-containing precursor over the metallic liner; performing a thermal soak of the substrate; repeating the depositing of the zinc-containing precursor and the thermal soak of the substrate for a predefined number of cycles; wherein the method forms a zinc-containing barrier layer at an interface between the metallic liner and the dielectric.

Zincating and doping of metal liner for liner passivation and adhesion improvement

A method comprises depositing a barrier layer on a dielectric layer to prevent oxidation of a metal layer to be deposited by electroplating due to an oxide present in the dielectric layer and depositing a doped liner layer on the barrier layer to bond with the metal layer to be deposited on the liner layer by the electroplating. The dopant forms a protective passivation layer on a surface of the liner layer and dissolves during the electroplating so that the metal layer deposited on the liner layer by the electroplating bonds with the liner layer. The dopant reacts with the dielectric layer and forms a layer of a compound between the barrier layer and the dielectric layer. The compound layer prevents oxidation of the barrier layer and the liner layer due to the oxide present in the dielectric layer and adheres the barrier layer to the dielectric layer.

Metal liner passivation and adhesion enhancement by zinc doping

A method is provided, including the following operations: depositing a liner in a feature of a substrate; depositing a monolayer of zinc over the liner; after depositing the monolayer of zinc, performing a thermal treatment on the substrate, wherein the thermal treatment is configured to cause migration of the zinc to an interface of the liner and an oxide layer of the substrate, the migration of the zinc producing an adhesive barrier at the interface that improves adhesion between the liner and the oxide layer of the substrate; repeating the operations of depositing the monolayer of zinc and performing the thermal treatment until a predefined number of cycles is reached.

Electrochemical doping of thin metal layers employing underpotential deposition and thermal treatment

A method of performing electroless electrochemical atomic layer deposition is provided and includes: providing a substrate including an exposed upper metal layer; exposing the substrate to a first precursor solution to create a sacrificial metal monolayer on the exposed upper metal layer via underpotential deposition, where the first precursor solution is an aqueous solution including a reducing agent; subsequent to the forming of the sacrificial metal monolayer, rinsing the substrate; subsequent to the rinsing of the substrate, exposing the substrate to a second precursor solution to replace the sacrificial metal monolayer with a first deposition layer; and subsequent to replacing the sacrificial metal monolayer with the first deposition layer, rinsing the substrate. The exposure of the substrate to the first precursor solution and the exposure of the substrate to the second precursor solution are electroless processes.

Selective electroless electrochemical atomic layer deposition in an aqueous solution without external voltage bias

Layer-by-layer thickness control of an electroplated film can be achieved by using a cyclic deposition process. The cyclic process involves forming a layer (or partial layer) of hydrogen on a surface of the substrate, then displacing the layer of hydrogen with a layer of metal. These steps are repeated a number of times to deposit the metal film to a desired thickness. Each step in the cycle is self-limiting, thereby enabling atomic level thickness control.

Layer-by-layer deposition using hydrogen

A method is provided, including the following operations: depositing a ruthenium liner in a feature of a substrate; depositing a monolayer of zinc over the ruthenium liner; after depositing the monolayer of zinc, performing a thermal treatment on the substrate, wherein the thermal treatment is configured to cause migration of the zinc to an interface of the ruthenium liner and an oxide layer of the substrate, the migration of the zinc producing an adhesive barrier at the interface that improves adhesion between the ruthenium liner and the oxide layer of the substrate; repeating the operations of depositing the monolayer of zinc and performing the thermal treatment until a predefined number of cycles is reached.

A method is provided, including the following operations: performing a deposition process on a substrate, the deposition process configured to deposit a ruthenium layer in a feature on the substrate, the ruthenium layer being doped with zinc at an atomic percentage less than approximately 30 percent; after depositing the ruthenium layer, annealing the substrate, wherein the annealing is configured to cause migration of the zinc to an interface of the ruthenium layer and an oxide layer of the substrate, the migration of the zinc producing an adhesive barrier at the interface that inhibits electromigration of the ruthenium layer.

Self-forming barrier process

A substrate is provided having a dual damascene structure formed within a dielectric material over the substrate. The dual damascene structure includes a trench and an opening formed to extend from a bottom of the trench to an underlying conductive material, with the underlying conductive material exposed at a bottom of the opening. The dual damascene structure is exposed to a sealing process by which the exposed surfaces of the dielectric material in the opening are sealed without covering the underlying conductive material exposed at the bottom of the opening. The sealing process can be one or more of deposition of a flowable film, deposition of an amorphous carbon barrier layer, and formation of a self-assembled monolayer of an amino group. After the sealing process, an electroless deposition process is performed to fill the opening with a metallic material in a bottom-to-top manner up to the bottom of the trench.

Interlevel conductor pre-fill utilizing selective barrier deposition

A method is provided, including the following operations: performing a deposition process on a substrate, the deposition process configured to deposit a copper layer in a feature on the substrate, the copper layer being doped with zinc at an atomic percentage less than approximately 30 percent; after depositing the copper layer, annealing the substrate, wherein the annealing is configured to cause migration of the zinc to an interface of the copper layer and an oxide layer of the substrate, the migration of the zinc producing an adhesive barrier at the interface that inhibits electromigration of the copper layer.

A solution for electroless deposition of platinum is provided. The solution comprises Coions, Ptions, and amine ligands. A ratio of Coto Ption is between 100:1 and 2:1. The solution allows for electroless deposition of platinum without requiring high temperatures and high pH. The solution allows for the deposition of a pure platinum layer.

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A method for selectively depositing a ferromagnetic layer on a conducting layer, includes providing a substrate including a conducting layer; preparing a solution including a metal salt; adding a complexing agent to the solution; adding a reducing agent to the solution; while a temperature of the solution is less than 75&#xb0; C., immersing the substrate in the solution for a predetermined period to deposit a ferromagnetic layer on the conducting layer by electroless deposition, wherein the ferromagnetic layer comprises one of cobalt (Co), iron (Fe) or CoFe; and after the predetermined period, removing the substrate from the solution.

Selective deposition and co-deposition processes for ferromagnetic thin films

A method for providing an electroless plating of a platinum containing layer is provided. A Tistabilization solution is provided. A Ptstabilization solution is provided. A flow from the Tistabilization solution is combined with a flow from the Ptstabilization solution and water to provide a diluted mixture of the Tistabilization solution and the Ptstabilization solution. A substrate is exposed to the diluted mixture of the Tistabilization solution and the Ptstabilization solution.

Electroless deposition of continuous platinum layer

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Palo Alt, CA, United States of America

Yezdi N Dordi