Globalfoundries Singapore Pte. Ltd.

Yew Tuck Clament Chow

Juan Boon Tan

Fan Zhang

Danny Pak-Chum Shum

Yi Jiang

Curtis Chun-I Hsieh

Yong Wee Francis Poh

Huajun Liu

Aaron Chen

Laiqiang Luo

Dong Wang

Jianfang Liang

Subash Pattabiraman Lakshmipathi

Jin Ho Lee

Narayanapillai Kulothungasagaran

Hongxi Liu

Baolei Wu

Tian-Lin Chang

Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, a method of producing an integrated circuit includes forming a lower contact in a lower interlayer dielectric layer. A base contact layer is formed overlying the lower interlayer dielectric layer and the lower contact, and a base contact is formed by removing a portion of the base contact layer. The base contact is formed in electrical communication with the lower contact. A base interlayer dielectric layer is formed overlying the lower interlayer dielectric layer after forming the base contact, where the base interlayer dielectric layer is adjacent to a base contact side surface. A memory cell is formed overlying the base contact, where the memory cell is in electrical communication with the base contact.

Integrated circuits with memory cells and methods for producing the same

Integrated circuits and methods of producing the same are provide. In an exemplary embodiment, a method includes determining a memory area of the integrated circuit, and forming a select layer overlying the substrate. A portion of the select layer is selectively etched to form a select gate within the memory area. A concentration of an indicator is measured in an etch off-gas during the selective etching of the select layer, and the selective etching of the select layer is terminated when the concentration of the indicator crosses an end point determination concentration.

Integrated circuits with non-volatile memory and methods of producing the same

Semiconductor devices and methods for forming a semiconductor device are presented. The method includes providing a substrate having a device component with a contact region. A contact dielectric layer is formed on the substrate, covering the substrate and device component. The contact dielectric layer includes a lower contact dielectric layer, an intermediate contact dielectric etch stop layer formed on the lower contact dielectric layer, and an upper contact dielectric layer formed on the intermediate contact dielectric etch stop layer. A contact opening is formed through the contact dielectric layer. The contact opening has an upper contact sidewall profile in the upper contact dielectric layer and a lower tapered contact sidewall profile in the lower contact dielectric layer. The tapered sidewall profile prevents shorting with the device component.

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Singapore, Singapore

Yew Tuck Clament Chow