Asml Holding N.v.

Asml Netherlands B.v.

Yevgeniy Konstantinovich Shmarev

Stanislav Y Smirnov

Adel Joobeur

Lev Ryzhikov

Eric Brian Catey

Richard Jacobs

Arie Jeffrey Den Boef

Armand Eugene Albert Koolen

Huibert Visser

Scott Douglas Coston

Richard Carl Zimmerman

Alexander Kenneth Raub

Jacob Fredrik Friso Klinkhamer

Joshua Adams

Douglas C Cappelli

Robert Tharaldsen

Rob Vink

Harry Sewell

Nitesh Pandey

Stephen Roux

Markus Franciscus Antonius Eurlings

Mohamed Swillam

Tamer Mohamed Tawfik Ahmed Mohamed Elazhary

Nora-Jean Harned

Arun Mahadevan Venkataraman

Chien-Hung Tseng

Irina I Pozhinskaya

David Heald

Abel Joobeur

A compact sensor apparatus having an illumination beam, a beam shaping system, a polarization modulation system, a beam projection system, and a signal detection system. The beam shaping system is configured to shape an illumination beam generated from the illumination system and generate a flat top beam spot of the illumination beam over a wavelength range from 400 nm to 2000 nm. The polarization modulation system is configured to provide tenability of linear polarization state of the illumination beam. The beam projection system is configured to project the flat top beam spot toward a target, such as an alignment mark on a substrate. The signal detection system is configured to collect a signal beam comprising diffraction order sub-beams generated from the target, and measure a characteristic (e.g., overlay) of the target based on the signal beam.

Optical designs of miniaturized overlay measurement system

According to one embodiment, a prism system is provided. The prism system includes a polarizing beam splitter (PBS) surface. The PBS surface is configured to generate first and second sub-beams having corresponding first and second polarization information from a received beam, the second polarization information being different than the first polarization information. A first optical path of the first sub-beam within the prism system has substantially same length as a second optical path of the second sub-beam within the prism system. Additionally or alternatively, the first sub-beam achieves a predetermined polarization extinction ratio.

Beam splitting prism systems

An inspection apparatus, including: an objective configured to receive diffracted radiation from a metrology target having positive and negative diffraction order radiation; an optical element configured to separate the diffracted radiation into portions separately corresponding to each of a plurality of different values or types of one or more radiation characteristics and separately corresponding to the positive and negative diffraction orders; and a detector system configured to separately and simultaneously measure the portions.

Metrology method and device

An illumination system for a metrology apparatus that can achieve illumination spatial profile flexibility, high polarization extinction ratio, and high contrast. The illumination system includes a polarizing beam splitter (PBS), an illumination mode selector (IMS), and a reflective spatial light modulator (SLM). The PBS divides an illumination beam into sub-beams. The IMS has a plurality of apertures that transmits at least one sub-beam and may be arranged in multiple illumination positions corresponding to illumination modes. A pixel array of the reflective SLM and reflects a portion of the sub-beam transmitted by the IMS back to the IMS and PBS. The PBS, IMS, SLM collectively generates a complex amplitude or intensity spatial profile of the transmitted sub-beam.

Method and device for pupil illumination in overlay and critical dimension sensors

An inspection apparatus includes an inspection optical system configured to a direct an inspection beam onto a surface of a substrate, the inspection optical system having an objective, a focus measurement optical system configured to receive a focus measurement beam, redirected by the substrate, from the objective, the focus measurement optical system having a movable reflective element configured to receive the focus measurement beam, and a control system configured to cause movement of the reflective element with a direction component along a beam path of the focus measurement beam and configured to determine whether the substrate surface is in the focus of the objective based on the focus measurement beam.

Method and device for focusing in an inspection system

An inspection apparatus including: a substrate holder configured to hold a substrate; an aperture device; and an optical system configured to direct a first measurement beam of radiation onto the substrate, the first measurement beam having a first intensity distribution, and configured to direct a second focusing beam of radiation onto the substrate at a same time as the first measurement beam is directed on the substrate, the second focusing beam having a second intensity distribution, wherein at least part of the second intensity distribution is spatially separated from the first intensity distribution at least at the substrate and/or the aperture device.

A catadioptric optical system operates in a wide spectral range. In an embodiment, the catadioptric optical system includes a first reflective surface positioned and configured to reflect radiation; a second reflective surface positioned and configured to reflect radiation reflected from the first reflective surface as a collimated beam, the second reflective surface having an aperture to allow transmission of radiation through the second reflective surface; and a channel structure extending from the aperture toward the first reflective surface and having an outlet, between the first reflective surface and the second reflective surface, to supply radiation to the first reflective surface.

Catadioptric illumination system for metrology

An inspection apparatus may determine precise OV measurements of a target on a substrate using an optical pupil symmetrizer to reduce the inspection apparatus's sensitivity to asymmetry and non-uniformity of the illumination beam in the pupil plane. The inspection apparatus includes an illumination system that forms a symmetrical illumination pupil by (1) splitting an illumination beam into sub-beams, (2) directing the sub-beams along different optical branches, (3) inverting or rotating at least one of the sub-beams in two dimensions, and recombining the sub-beams along the illumination path to symmetrize the intensity distribution. The illumination system is further configured such that the first and second sub-beams have an optical path difference that is greater than a temporal coherence length of the at least one beam and less than a depth of focus in the pupil plane of the objective optical system.

Method and apparatuses for optical pupil symmetrization

An inspection apparatus includes an illumination system that receives a first beam and produces second and third beams from the first beam and a catadioptric objective that directs the second beam to reflect from a wafer. A first sensor detects a first image created by the reflected second beam. A refractive objective directs the third beam to reflect from the wafer, and a second sensor detects a second image created by the reflected third beam. The first and second images can be used for CD measurements. The second beam can have a spectral range from about 200 nm to about 425 nm, and the third beam can have a spectral range from about 425 nm to about 850 nm. A third sensor may be provide that detects a third image created by the third beam reflected from the wafer. The third image can be used for OV measurements.

Inspection apparatus, lithographic apparatus, and device manufacturing method

Disclosed are apparatuses, methods, and lithographic systems for EUV mask inspection. An EUV mask inspection system can include an EUV illumination source, an optical system, and an image sensor. The EUV illumination source can be a standalone illumination system or integrated into the lithographic system, where the EUV illumination source can be configured to illuminate an EUV radiation beam onto a target portion of a mask. The optical system can be configured to receive at least a portion of a reflected EUV radiation beam from the target portion of the mask. Further, the image sensor can be configured to detect an aerial image corresponding to the portion of the reflected EUV radiation beam. The EUV mask inspection system can also include a data analysis device configured to analyze the aerial image for mask defects.

EUV mask inspection system

A system and method is described for correcting aberrations caused by field curvature with a catadioptric objective. In one example, a catadioptric optical system includes a first catadioptric element and a second catadioptric element. The first catadioptric element includes a first surface positioned to reflect a beam and a second surface positioned to focus the beam reflected by the first surface. The second catadioptric element is configured to receive the beam reflected by the second surface of the first catadioptric element. The second catadioptric element includes a third surface positioned to reflect the beam, and a fourth reflective surface positioned to focus the beam reflected by the third reflective surface. A curvature of the third or fourth surfaces of the second catadioptric element is chosen to apply a positive contribution to a field curvature associated with the first catadioptric element.

Catadioptric objective for scatterometry

An interferometric lithography system produces a pattern having a sharp field edge and minimal optical path length difference. Light passes through a beamsplitter into an input prism. The two beams produced by the beamsplitter are reflected off respective surfaces of the input prism toward a substrate prism. The substrate prism is symmetric to the input prism such that the incidence angle at an image plane is approximately equal to the beamsplitter diffraction angle. Alternatively, light passes through a beamsplitter into a prism. The two beams produced by the beamsplitter are reflected off respective surfaces of the prism toward an output surface of the prism, such that the incidence angle at the output surface is approximately equal to the beamsplitter diffraction angle. A plurality of these interferometers can be stacked, each being optimized for a given pitch, such that the stack provides a variable pitch interferometry system.

System and method for printing interference patterns having a pitch in a lithography system

Disclosed are systems and methods for time differential reticle inspection. Contamination is detected by, for example, determining a difference between a first signature of at least a portion of a reticle and a second signature, produced subsequent to the first signature, of the portion of the reticle.

Growing community of inventors

Lagrangeville, NY, United States of America

Yevgeniy Konstantinovich Shmarev