USA As Represented by Secretary of the Navy

Rockwell International Corporation

Gtran Corporation

Fermionics Corporation

Yet-Zen Liu

Chi-Shain Hong

P Danial Dapkus

Cheng-Chi Wang

Muren Chu

Ivair Gontijo

Ram Panicker

James J Coleman

Robert Franks

Gary Lee Gutierrez

Kirit Dharia

One embodiment of the present invention provides a module including a primary substrate defining a base of the module, wherein the primary substrate is provided with a plurality of vias for electrical connection to a photodetector located within an interior portion of the module; a side wall member joined to the primary substrate to form side walls of the module and to define the interior portion of the module; a secondary substrate positioned within the interior portion of the module, the photodetector being mounted on the secondary substrate; an optical fiber guide extending into the interior portion of the module from outside the module, the optical fiber being arranged to receive an optical fiber and to position the optical fiber so that light emerging from the optical fiber impinges upon the photodetector; and a lid joined to the side wall member to enclose the interior portion of the module.

High frequency optical module and method of making same

HgCdTe semiconductor material having an n-type epitaxial layer is grown on a substrate. A graded p-type epitaxial layer is grown on the n-type layer. The p-type layer is graded such that the large bandgap region is adjacent the heterojunction with the narrow bandgap region at the surface of this layer. The periphery of the p-type layer is then etched to expose the large bandgap material. A HgCdTe passivation layer may then be formed on the p-type layer. A resultant structure is then mesa etched. A metal, such as indium, is formed along the walls of the mesa structure. Indium is selected to form a good ohmic contact with the n-type layer and a Schottky barrier with the large bandgap exposed edge of the p-type layer. In this way, the PN junction is passivated at the large bandgap material. The remaining narrow bandgap material in the p-type will form a good ohmic contact to a metal contact formed on this layer.

Method of making an infrared detector

A w-shaped diffused stripe GaAs/AlGaAs laser and a method for making the e. A double heterostructure layered structure includes a p-type GaAs active layer in contact with a p-type AlGaAs current blocking layer. These layers are sandwiched between two N-type AlGaAs confinement layers. A p-type zinc diffused stripe region having a w-shaped diffusion front extends longitudinally between two reflective surfaces located on respective ends of the device and extends vertically from the surface of the upper confinement layer through a portion of the lower confinement layer and through portions of the various intervening layers. In a method of forming the device, the various layers are formed by epitaxial growth or by metalorganic chemical vapor deposition. The stripe region is formed by diffusing zinc into the device from a source through a pair of parallel slots in a diffusion mask. The zinc diffused into the device is further driven-in by heating the device in the absence of the zinc source.

W-shaped diffused stripe GaAs/AlGaAs laser

A zinc-diffused narrow stripe AlGaAs/GaAs double heterostructure laser device and a method of making the same. A double heterostructure layered structure including a p-type GaAs active layer sandwiched between two n-type AlGaAs confinement layers is formed on a substrate. A p-type zinc diffused stripe region having a U-shaped diffusion front extends longitudinally between two reflective surfaces located on respective ends of the device and extends vertically from the surface of the upper confinement layer down to at least the surface of intersection between the active layer and the lower confinement layer. In a method of forming the device, the various layers are formed by epitaxial growth or by metalorganic chemical vapor deposition. The stripe region is formed by diffusing zinc from a source through a slot in a diffusion mask. The zinc diffused into the device is driven in by heating the device in the absence of the zinc source.

Zinc-diffused narrow stripe AlGaAs/GaAs double heterostructure laser

An imaging charge coupled device (CCD) is provided which has a support on the non-illuminated, circuit side of a CCD channel layer. The other side of the CCD channel layer (the semiconductor side) is epitaxially joined to an absorber layer of semiconductor which is epitaxially joined to a window layer. This structure is fabricated by growing the epitaxial semiconductor layers (window, absorber, and channel) on a semiconductor substrate, fabricating a CCD circuit on the channel layer, mounting the channel layer to a support, and finally etching off the substrate.

Backside illuminated imaging charge coupled device

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Westlake Village, CA, United States of America

Yet-Zen Liu