Samsung Electronics Co., Ltd.

Yeonsook Kim

Sungmin Kim

Taesung Kim

Sam-jong Choi

Junga Lee

Kyoochul Cho

Joonyoung Choi

Tae-Hyoung Koo

Jung-A Lee

Heesung Kim

Inji Lee

Wooseung Jung

An epitaxial wafer and a semiconductor memory device, the epitaxial wafer including a semiconductor substrate having a front surface and a rear surface opposite to each other; a strain relaxed buffer (SRB) layer on and entirely covering the front surface of the semiconductor substrate; and a multi-stack on and entirely covering a surface of the SRB layer, wherein the SRB layer includes a silicon germanium (SiGe) epitaxial layer including germanium (Ge) at a first concentration of about 2.5 at % to about 18 at %, and the multi-stack has a superlattice structure in which a plurality of silicon (Si) layers and a plurality of SiGe layers are alternately provided.

Epitaxial wafer and semiconductor memory device using the same

A semiconductor device is provided that includes a base substrate, an insulating film on the base substrate, and an upper substrate on the insulating film. The insulating film includes a crystalline insulating material. A thickness of the insulating film is about 1 nm to about 1,000 nm, and a thickness of the upper substrate is about 1 nm to about 100 nm.

Semiconductor device

An epitaxial wafer and a method of fabricating an epitaxial wafer, the method including providing a semiconductor substrate doped with both boron and germanium such that a sum of boron concentration and germanium concentration is at least 8.5E+18 atoms/cmand the germanium concentration is 6 times or less the boron concentration; forming an epitaxial layer on the semiconductor substrate such that the semiconductor substrate and the epitaxial layer constitute the epitaxial wafer; and annealing the epitaxial wafer for 1 hour or longer at a temperature of 1,000&#xb0; C. or less.

Epitaxial wafer including boron and germanium and method of fabricating the same

A method of processing a semiconductor wafer includes preheating the wafer to a preheating temperature that is less than a peak temperature, heating the wafer from the preheating temperature to the peak temperature at a first ramp rate that averages about 100&#xb0; C. per second or more, and, immediately after heating the wafer from the preheating temperature to the peak temperature, cooling the wafer at a second ramp rate that averages about &#x2212;70&#xb0; C. per second or more from the peak temperature to the preheating temperature, wherein the peak temperature is about 1,100&#xb0; C. or more.

Semiconductor wafer, semiconductor device using the same, and method and apparatus for producing the same

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Hwaseong-si, South Korea

Yeonsook Kim