Samsung Electronics Co., Ltd.

Hyundai Motor Company

Yeonji Kim

Sang-Kuk Kim

Oik Kwon

Jongchul Park

Heewon Lee

Inho Kim

Youngdeok Seo

Kangho Roh

Hyunkyo Oh

Chanha Kim

Sang Yeon Lim

Kwangwoo Lee

Ja Yoon Goo

Woohyun Lee

Ki Beom Kwon

Jeong Won Lee

Yunseung Kang

Hyun Seung Yang

Sangjin Yoo

Yongho Lee

Sujin Jeon

Jeongkeun Park

Jeongwoo Lee

Dae Jin An

Sungtae Cho

Hye Jin Choi

Jake Gin

A storage device includes a non-volatile memory including memory blocks, and a storage controller including a history buffer including plural history read level storage areas corresponding to the memory blocks. The storage controller dynamically adjusts a number of the history read level storage areas allocated to one or more of the plurality of memory blocks based on reliabilities of the memory blocks during runtime of the storage device. The storage controller increases a number of history read level storage areas allocated to a first memory block among the memory blocks that has a relatively low reliability with respect to the reliabilities of remaining ones of the memory blocks.

Storage device adjusting history read level storage areas based on reliabilities of memory blocks, storage controller, and operating method of storage controller

A three-dimensional (3D) semiconductor memory device including first cell stacks arranged in first and second directions; second cell stacks disposed on the first cell stacks and arranged in the first and second directions; first conductive lines extending in the first direction and provided between a substrate and the first cell stacks; common conductive lines extending in the second direction and provided between the first and second cell stacks; etch stop patterns extending in the second direction and provided between the common conductive lines and top surfaces of the first cell stacks; second conductive lines extending in the first direction and provided on the second cell stacks; and a capping pattern covering a sidewall of the common conductive lines and a sidewall of the etch stop patterns, wherein each of the common conductive lines has a second thickness greater than a first thickness of each of the first conductive lines.

Three-dimensional semiconductor memory devices

An operation method of a storage controller which includes a nonvolatile memory device, the method including: collecting a first parameter indicating a degradation factor of a first memory area of the nonvolatile memory device and a second parameter indicating a degree of degradation occurring at the first memory area, in an initial driving period; selecting a first function model of a plurality of function models based on the first parameter and the second parameter and predicting a first error tendency of the first memory area based on the first function model; determining a first reliability interval based on the first error tendency; and performing a first reliability operation on the first memory area of the nonvolatile memory device based on the first reliability interval.

Operation method of a storage controller configured to control a nonvolatile memory device

A semiconductor device includes a first lower insulating interlayer, a protection insulating layer, and a first upper insulating interlayer that are sequentially stacked on a substrate, and a conductive pattern penetrating the first upper insulating interlayer, the protection insulating layer; and the first lower insulating interlayer. The conductive pattern includes a line part extending in a direction parallel to an upper surface of the substrate and contact parts extending from the line part toward the substrate. The contact parts are separated from each other with an insulating pattern therebetween. The insulating pattern includes a portion of each of the first upper insulating interlayer, the protection insulating layer, and the first lower insulating interlayer. At least a portion of the insulating pattern has a stepped profile.

Semiconductor devices

The present disclosure provides charging station guide apparatus and method. The charging station guide apparatus includes: a global positioning system (GPS) receiving a GPS signal transmitted from a GPS satellite; a storage unit storing charging station information including map information and charging station position information; a control unit generating a first display window including a vehicle object representing vehicle position information and a charging station position object representing charging station position information based on the GPS signal, the map information, and the charging station information, generating a second display window including a charging station distance object representing charging station distance information, and also generating an image so that the second display window overlaps with one end of the first display window; and a display unit displaying an image generated from the control unit.

Charging station guide apparatus and method of the same

A vehicle is provided and configured to allow a driver to recognize a degree of proximity of another vehicle by turning on a warning light differentially based on a degree of proximity of the other vehicle driving in a blind spot. The vehicle includes a rear lateral side detection unit that is configured to detect a rear lateral side including a blind spot and a side mirror including a mirror. A first indicator is disposed in the mirror and is configured to be turned on when a blind spot detection function is activated and a second indicator includes a plurality of indicators and is configured such that the number of a turned-on indicator is increased in a predetermined direction as a distance between the other vehicle, which is approaching in a blind spot, and a subject vehicle decreases, according to a detection result of the rear lateral side detection unit.

Vehicle and method for controlling vehicle

Growing community of inventors

Seoul, South Korea

Yeonji Kim