Samsung Electronics Co., Ltd.

Seoul National University

Yeonhong Park

Jaewook Lee

Woosuk Kwon

Jungho Ahn

Eojin Lee

Hoon Shin

Taejun Ham

A hammer refresh row address detector includes a control logic unit that receives a row address applied along with an active command, to increase a hit count stored in a corresponding entry when the row address is present in candidate aggressor row addresses stored in n entries. The control logic determines a candidate aggressor row address stored in an entry in which the hit count equals a threshold value to be a target aggressor row address. The control logic generates a victim row address adjacent to the target aggressor row address as a hammer refresh row address to accompany a hammer refresh command. The control logic increases the miss count value when the row address is not present in the candidate aggressor row addresses stored in the n entries and no hit count within the n entries is identical to the miss count value.

Hammer refresh row address detector, and semiconductor memory device and memory module including the same

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Seoul, South Korea

Yeonhong Park