Samsung Display Co., Ltd.

Yeonhong Kim

Seungjun Lee

Jaybum Kim

Seunghun Lee

Myeongho Kim

Junhyung Lim

Junghyun Kim

Jin Woo Lee

Sunhee Lee

Kyoungseok Son

Pilsuk Lee

Jintaek Kim

Waljun Kim

Jun Hyung Lim

Kyoung Seok Son

Sungeun Lee

Kyoungwon Lee

Jongyun Kim

SunHee Lee

Eunhyun Kim

Kwangyoung Choi

Eunhye Ko

Moosoon Ko

Kiwan Ahn

Choongyoul Im

Taejin Kim

Yongjae Jang

Kwangsuk Kim

A display device includes a first lower electrode disposed on a base substrate, a first upper electrode disposed on the first lower electrode, overlapping the first lower electrode in a plan view, including a silicon semiconductor, and constituting a first capacitor together with the first lower electrode, a second lower electrode disposed on the first upper electrode, and a second upper electrode disposed on the second lower electrode, overlapping the second lower electrode in a plan view, including an oxide semiconductor, and constituting a second capacitor together with the second lower electrode.

Pixel circuit having increased capacitance and display device including the same

A display device includes: a substrate; a buffer layer on the substrate; a first active pattern and a second active pattern on the buffer layer and spaced apart from each other; a first gate insulation layer on the first active pattern and the second active pattern; a first gate electrode and a second gate electrode on the first gate insulation layer, the first gate electrode and the second gate electrode respectively overlapping the first active pattern and the second active pattern; a second gate insulation layer on the first gate electrode and the second gate electrode; and a capacitor electrode on the second gate insulation layer, the capacitor electrode overlapping the first gate electrode, wherein a permittivity of the first gate insulation layer is greater than a permittivity of the buffer layer.

Display device having first, second and third high permittivity insulation layers

A display apparatus in which an area of a peripheral area may be reduced while having a simple structure, the display apparatus includes a substrate, a bottom metal layer on the substrate and including a first extension line extending from the peripheral area outside a display area into the display area, a semiconductor layer on the bottom metal layer, a gate layer on the semiconductor layer, a first metal layer on the gate layer, and a second metal layer on the first metal layer and including a first data line extending from the peripheral area into the display area and electrically coupled to the first extension line in the peripheral area.

Display apparatus

A display device is disclosed that includes: a substrate comprising a display area and a component area including a transmission area; a first thin-film transistor comprising a first semiconductor layer and a first gate electrode, the first semiconductor layer including a silicon semiconductor; a first insulating layer covering the first gate electrode; a second thin-film transistor comprising a second semiconductor layer arranged on the first insulating layer and a second gate electrode, the second semiconductor layer including an oxide semiconductor; a second insulating layer covering the second gate electrode and having a transmission hole overlapping the transmission area; an intermediate insulating layer between the first insulating layer and the second insulating layer; a conductive pattern between the intermediate insulating layer and the first insulating layer; and a display element arranged on the second insulating layer, wherein the transmission hole exposes an upper surface of the intermediate insulating layer.

Display device and method of manufacturing the display device

Display device including first high permittivity insulation layer on first active pattern

A display apparatus includes a substrate including a transmission area having a first through hole, a display area surrounding the transmission area, and a middle area disposed between the transmission area and the display area, a pixel circuit disposed on the display area, the pixel circuit including a first thin film transistor including a first semiconductor layer having polycrystalline silicon, and a second thin film transistor including a second semiconductor layer including an oxide semiconductor, a display element including a pixel electrode electrically connected to the pixel circuit, an opposite electrode disposed on the pixel electrode, and an intermediate layer disposed between the pixel electrode and the opposite electrode and including an emission layer, and a groove disposed in the middle area while surrounding the first through hole.

Display apparatus including a groove disposed in the middle area while surrounding the first hole in the transmission area

Display device

A semiconductor device including a semiconductor layer, a first electrode, and a second electrode. The semiconductor layer includes a first source region, a first drain region, a second source region, and a second drain region connected to a channel region. The first gate electrode is disposed below the semiconductor layer. The first gate electrode is insulated from the semiconductor layer. The first gate electrode at least partially overlaps the shared channel region. The second gate electrode is disposed above the semiconductor layer. The second gate electrode is insulated by a second gate insulating layer. The second gate electrode at least partially overlaps the channel region.

Semiconductor device and a display device including the same

A method of manufacturing an organic light-emitting display apparatus using a light-blocking photoresist layer which minimizes damage to an intermediate layer, including an emission layer, during a process for manufacturing the organic light-emitting display apparatus.

Method of manufacturing organic light-emitting display apparatus and organic light-emitting display apparatus

An organic light emitting display apparatus includes a first pixel and a second pixel. The first pixel includes a first data line, a first driving thin film transistor (TFT), and a first contact metal connected to the first driving TFT and in a layer at a same level as a layer of the first data line. The second pixel includes a second data line, a second driving TFT, and a second contact metal connected to the second driving TFT and in a layer at a same level as a layer of the second data line. The first gap between the first driving TFT and the first contact metal is different from a second gap between the second driving TFT and the second contact metal.

Organic light emitting display apparatus

Growing community of inventors

Yongin-si, South Korea

Yeonhong Kim