Lg Electronics Inc.

Yeonhong Jung

Younghak Chang

Jungsub Kim

Myoungsoo Kim

Minwoo Lee

Yongdae Kim

Sunghyun Moon

Jina Jeon

Hongkyu Lee

Euna Moon

Yoonchul Kim

Youngje Jo

Discussed is a plurality of semiconductor light-emitting devices, wherein at least one of the semiconductor light-emitting devices includes: a first conductive electrode and a second conductive electrode; a first conductive semiconductor layer having the first conductive electrode arranged thereon; a second conductive semiconductor layer overlapping the first conductive semiconductor layer and having the second conductive electrode arranged thereon; an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer; an intermediate layer arranged on the second conductive semiconductor layer; a protrusion, made of an electro-polishable porous material, on the intermediate layer; and an undoped semiconductor layer arranged between the intermediate layer and the protrusion. The intermediate layer includes a first layer including second conductive impurities and a second layer having a higher concentration of the second conductive impurities than the first layer, wherein the first layer and the second layer are sequentially and repetitively stacked.

Display apparatus using semiconductor light-emitting device

Discussed is a manufacturing method of a display apparatus, and the display apparatus. The display includes a substrate, an adhesive layer located on the substrate and including protruding portions, semiconductor light-emitting diodes located on the adhesive layer, an insulating layer located on the semiconductor light-emitting diodes and the adhesive layer, and wiring electrodes electrically connected to the semiconductor light-emitting diodes, wherein the protruding portions of the adhesive layer are positioned at regular intervals to correspond to the shapes of the contact surfaces of the semiconductor light-emitting diodes in contact with the adhesive layer.

Display apparatus using micro LED and manufacturing method therefor

A semiconductor light emitting device including a first conductive electrode and a second conductive electrode; a first conductive semiconductor layer on which the first conductive electrode is disposed; a second conductive semiconductor layer overlapping the first conductive semiconductor layer, on which the second conductive electrode is disposed; and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer. Further, the second conductive semiconductor layer includes a first layer including a porous material capable of being electro-polished and disposed on an outer surface of the semiconductor light emitting device; a second layer disposed under the first layer and having a lower impurity concentration than the first layer; and a third layer disposed between the second layer and the active layer and having a higher impurity concentration than the second layer.

Display device using semiconductor light emitting device

A light emitting device is provided. The light emitting device includes a first white light source emitting a white light of which color coordinates exist within a MacAdam 10-step ellipse from color coordinates (0.4822, 0.3980); a second white light source emitting a white light of which color coordinates exist within a MacAdam 10-step ellipse from color coordinates (0.4180, 0.4337); and a third white light source emitting a white light of which color coordinates exist within a MacAdam 10-step ellipse from color coordinates (0.2806, 0.2981).

Light emitting device

Growing community of inventors

Seoul, South Korea

Yeonhong Jung