Au Optronics Corporation

Yeong-Shyang Lee

Han-Tu Lin

Wen-Ching Tsai

Kuo-Lung Fang

Kuo-Yuan Tu

Feng-Yuan Gan

Ching-Chieh Shih

Tsung-Yi Hsu

In one aspect of the invention, the method of forming a TFT array panel includes forming a patterned first conductive layer on a substrate, forming a gate insulating layer on the patterned first conductive layer and the substrate, forming a patterned semiconductor layer on the gate insulating layer, forming a patterned second conductive layer, forming a patterned passivation layer on the patterned second conductive layer and the substrate, and forming a patterned transparent conductive layer on the patterned passivation layer.

Apparatus and method for reducing photo leakage current for TFT LCD

The invention discloses a switching element of a pixel electrode for a display device and methods for fabricating the same. A gate is formed on a substrate. A first copper silicide layer is formed on the gate. An insulating layer is formed on the first copper silicide layer. A semiconductor layer is formed on the insulating layer. A source and a drain are formed on the semiconductor layer. Moreover, a second copper silicide layer is sandwiched between the semiconductor layer and the source/drain.

Switching device for a pixel electrode and methods for fabricating the same

A thin film transistor (TFT) and the manufacturing method thereof are disclosed, and the thin film transistor comprises: a substrate, a gate electrode, a first CuSilayer, a gate-insulting layer, a semiconductor layer, a second CuSilayer, and a source electrode and a drain electrode. The gate electrode is disposed on the substrate, wherein the gate electrode includes the material of copper (Cu). The first CuSilayer is disposed between the gate electrode and the substrate. The gate insulating layer is disposed on the gate electrode. The semiconductor layer is disposed on the gate insulating layer. The second CuSilayer is disposed between the source electrode and the semiconductor layer and is disposed between the drain electrode and the semiconductor layer, wherein the source electrode and the drain electrode include the material of copper (Cu). The source electrode and the drain electrode are disposed on the second CuSilayer. Accordingly, the reliable TFT is provided through providing at last one CuSilayer for enhancing the adhesion of copper and silicon and avoiding the diffusion, and the yield is improved as well.

Thin film transistor and manufacturing method thereof

A thin film transistor (TFT) and the manufacturing method thereof are disclosed, and the thin film transistor comprises: a substrate, a gate electrode, a first CuSilayer, a gate insulting layer, a semiconductor layer, a second CuSilayer, and a source electrode and a drain electrode. The gate electrode is disposed on the substrate, wherein the gate electrode includes the material of copper (Cu). The first CuSilayer is disposed between the gate electrode and the substrate. The gate insulating layer is disposed on the gate electrode. The semiconductor layer is disposed on the gate insulating layer. The second CuSilayer is disposed between the source electrode and the semiconductor layer and is disposed between the drain electrode and the semiconductor layer, wherein the source electrode and the drain electrode include the material of copper (Cu). The source electrode and the drain electrode are disposed on the second CuSilayer. Accordingly, the reliable TFT is provided through providing at last one CuSilayer for enhancing the adhesion of copper and silicon and avoiding the diffusion, and the yield is improved as well.

Growing community of inventors

Hsinchu, Taiwan

Yeong-Shyang Lee