Samsung Electronics Co., Ltd.

Fadu Inc.

Yeong-Jae Woo

Han Bin Yoon

Dong Gi Lee

Hyuck-Sun Kwon

Sungyong Seo

Young Kug Moon

Kyung Ho Kim

Hongseok Kim

Jang Hui Kim

Kwang-Ho Kim

Kwang Ho Kim

Moon-Sang Kwon

Eun-chu Oh

Dong-Gi Lee

Jin-Hyuk Lee

Moonsang Kwon

Kyoung-Il Bang

Seunguk Shin

EHyun Nam

Sangmok Kim

Jung Been Im

Han-shin Shin

Otae Bae

Sung-yong Seo

Han-Bin Yoon

Han-Chan Jo

Dong Hyun Song

Jin-yong Choi

Hyun-Seung Jei

Hyuvk-Sun Kwon

Sunmi Lee

A memory controller and a storage device including the same are provided. The memory controller for performing a buffering operation of temporarily storing data to be written to a non-volatile memory and data to be read from the non-volatile memory in a buffer memory includes a buffer request queue configured to store a plurality of buffer write requests requesting data to be temporarily stored in the buffer memory and a plurality of buffer read requests requesting data stored in the buffer memory to be read, a buffer traffic monitor configured to calculate the total amount of requested data in real time by summing the lengths of data specified in the respective buffer write requests and the respective buffer read requests stored in the buffer request queue, and a buffer manager configured to control execution of the buffering operation by setting an execution ratio based on the total amount of requested data calculated in real time.

Memory controller and storage device including the same

Data storage is provided which includes a nonvolatile memory device including a plurality of memory blocks divided into a first region being an over provisioning region and a second region, and a storage controller allocating at least one memory block, corresponding to an unconcerned sector, from among memory blocks of the second region to the first region. It may be possible to adjust the number of reserved memory blocks in the over provisioning region.

Data storage and operating method thereof

A memory device capable of performing an overwrite operation, a memory system, and a method of operating the memory system are provided. The method includes receiving one or more write requests, a logical address and data corresponding to the one or more write requests; comparing a result of analyzing at least one of the received one or more write requests, logical address, and data with a threshold value; and writing data using a first update method or a second update method, based on a result of the comparison. When the first update method is selected, the data are written in a region indicated by a physical address corresponding to the logical address according to address mapping information. When the second update method is selected, information of the physical address corresponding to the logical address is changed, and the data are written in a region indicated by the changed physical address.

Memory system, including memory device capable of overwrite operation, and method of operating the memory system

A method of operating a memory system including a nonvolatile memory, having a meta data region and a user data region, and a memory controller having a meta data manager. The method includes programming data to a memory block of the user data region and, by operation of the meta data manager, generating a meta log based on the programming. The meta log is stored to the memory controller. Upon a power-off operation, selectively storing the meta log to the meta data region of the nonvolatile memory based on status information of the nonvolatile memory.

Method of operating a memory system having a meta data manager

A writing method of a storage system which includes a host and a storage connected to the host, includes receiving journal data during a generation of a data writing transaction; inserting in a first map table, a plurality of entries, each entry including a first logical address of a first logical area of the storage and a second logical address of a second logical area of the storage; writing the journal data to a physical area of the storage corresponding to the first logical address; and remapping the physical area from the first logical address onto the second logical address using the plurality of entries when a size of a usable space of the first logical area is less than a desired value.

Storage system and writing method thereof

A semiconductor storage device and a method of throttling performance of the same are provided. The semiconductor storage device includes a non-volatile memory device; and a controller configured to receive a write command from a host and program write data received from the host to the non-volatile memory device in response to the write command. The controller inserts idle time after receiving the write data from the host and/or after programming the write data to the non-volatile memory device.

Semiconductor storage device and method of throttling performance of the same

A semiconductor storage device and a method of throttling performance of the same are provided. The semiconductor storage device includes a non-volatile memory device configured to store data in a non-volatile state; and a controller configured to control the non-volatile memory device. The controller calculates a new performance level, compares the calculated performance level with a predetermined reference, and determines the calculated performance level as an updated performance level according to the comparison result.

A semiconductor storage device and a method of throttling performance of the same are provided. The semiconductor storage device includes a non-volatile memory device configured to store data in a non-volatile state, and a controller configured to control the non-volatile memory device. The controller calculates a new performance level, compares the calculated performance level with a predetermined reference, and determines the calculated performance level as an updated performance level according to the comparison result.

A semiconductor storage device (SSD) and a method of throttling performance of the SSD are provided. The method can include includes gathering at least two workload data items related with to a workload of the semiconductor storage device, estimating the workload using the at least two workload data items, and throttling the performance of the semiconductor storage device according to the estimated workload. Accordingly, a workload that the semiconductor storage device will undergo can be estimated.

A semiconductor storage device and a method of throttling performance of the same are provided. The semiconductor storage device includes a non-volatile memory device, and a controller configured to receive a write command from a host and program and to write data received from the host to the non-volatile memory device in response to the write command. The controller inserts idle time after receiving the write data from the host and/or after programming the write data to the non-volatile memory device.

A method of managing a page buffer of a non-volatile memory device comprises programming least significant bit (LSB) page data from an LSB page buffer into a page of memory cells, and retaining the LSB page data in the LSB page buffer until most significant bit (MSB) page data corresponding to the LSB page data is programmed in the page.

Method and apparatus for controlling page buffer of non-volatile memory device

A data storage device comprises a plurality of memory devices, a buffer memory, and a controller. The plurality of memory devices are connected to a plurality of channels and a plurality of ways. The buffer memory temporarily stores data to be written in the memory devices. The controller stores the data in the buffer memory based on channel and way information of the memory devices.

Growing community of inventors

Guri-si, South Korea

Yeong-Jae Woo